Semiconductors -- April 2003

Structural Disordering and Viedemann–Franz Relation in Melts of Some II–IV–V₂ Semiconductors
Ya. B. Magomedov and M. A. Aidamirov
pp. 367-369    Full Text: PDF (42 kB)

Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor–Metal Phase Transition
V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin, A. V. Il'inskii, and F. Silva-Andrade
pp. 370-374    Full Text: PDF (165 kB)

Recombination Current Instability in Epitaxial p⁺–n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters
B. S. Muravskii^[dagger], O. N. Kulikov, and V. N. Chernyi
pp. 375-379    Full Text: PDF (73 kB)

Optical Reflection in (Pb_0.78Sn_0.22)_1 – xIn_xTe Solid Solutions with a High Indium Content
A. N. Veis and A. V. Nashchekin
pp. 380-383    Full Text: PDF (226 kB)

Effect of Lattice Deformation on Semiconducting Properties of CrSi₂
A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev, A. B. Filonov, and V. E. Borisenko
pp. 384-389    Full Text: PDF (109 kB)

Electrical Properties of InAs Irradiated with Protons
V. N. Brudnyi, N. G. Kolin, and A. I. Potapov
pp. 390-395    Full Text: PDF (107 kB)

Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals
V. A. Gnatyuk and O. S. Gorodnychenko
pp. 396-398    Full Text: PDF (87 kB)

IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon
E. V. Astrova, T. S. Perova, V. A. Tolmachev, A. D. Remenyuk, J. Vij, and A. Moore
pp. 399-403    Full Text: PDF (128 kB)

Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon
V. V. Lukjanitsa
pp. 404-413    Full Text: PDF (126 kB)

Photosensitive Structures Based on ZnIn₂Se₄ Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 414-416    Full Text: PDF (48 kB)

Special Features of Electron Scattering at Al_xGa_1 – xAs/AlAs(001) Interfaces
S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov
pp. 417-425    Full Text: PDF (117 kB)

The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons
D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova
pp. 426-432    Full Text: PDF (92 kB)

The Effect of Internal Fields on Tunneling Current in Strained GaN/Al_xGa_1 – xN(0001) Structures
S. N. Grinyaev and A. N. Razzhuvalov
pp. 433-438    Full Text: PDF (81 kB)

Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation–Thermal Technology
M. V. Ardyshev and V. M. Ardyshev
pp. 439-442    Full Text: PDF (54 kB)

The Influence of Carbon on the Properties of Si/SiGe Heterostructures
M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok, B. N. Romanyuk, and V. A. Yukhimchuk
pp. 443-447    Full Text: PDF (69 kB)

Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate
A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov
pp. 448-451    Full Text: PDF (56 kB)

Generation–Recombination Centers in CdTe:V
L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk, E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk
pp. 452-455    Full Text: PDF (72 kB)

Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes
V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichny, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin
pp. 456-461    Full Text: PDF (235 kB)

Properties of Ge Nanocrystals Formed by Implantation of Ge⁺ Ions into SiO₂ Films with Subsequent Annealing under Hydrostatic Pressure
I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev, A. Misiuk, M. Voelskow, and W. Skorupa
pp. 462-467    Full Text: PDF (93 kB)

Laser Ultrasonic Study of Porous Silicon Layers
S. M. Zharkii, A. A. Karabutov, I. M. Pelivanov, N. B. Podymova, and V. Yu. Timoshenko
pp. 468-472    Full Text: PDF (72 kB)

Raman Spectroscopy of Amorphous Carbon Modified with Iron
S. G. Yastrebov, V. I. Ivanov-Omskii, F. Dumitrache, and C. Morosanu
pp. 473-476    Full Text: PDF (52 kB)

Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 477-481    Full Text: PDF (60 kB)

3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates
A. A. Lebedev, A. M. Strel'chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov'ev, and N. K. Poletaev
pp. 482-484    Full Text: PDF (53 kB)

Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-µm Range
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha, and Yu. P. Yakovlev
pp. 485-490    Full Text: PDF (80 kB)

Vladimir Ivanovich Ivanov-Omskii (dedicated to his 70th birthday)

pp. 491-492    Full Text: PDF (73 kB)