Semiconductors -- May 2003

Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems
Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev
pp. 493-518    Full Text: PDF (384 kB)

Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe
T. I. Galkina, A. Yu. Klokov, A. I. Sharkov, Yu. V. Korostelin, and V. V. Zaitsev
pp. 519-522    Full Text: PDF (60 kB)

Magnetooptical Oscillations in Bismuth at T => 77 K
O. V. Kondakov and K. G. Ivanov
pp. 523-525    Full Text: PDF (47 kB)

A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron–Hole Plasma in GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov
pp. 526-531    Full Text: PDF (76 kB)

Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE
M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov, P. S. Kop'ev, T. Paskova, and B. Monemar
pp. 532-536    Full Text: PDF (72 kB)

Electronic Properties of Irradiated Semiconductors. A Model of the Fermi Level Pinning
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin
pp. 537-545    Full Text: PDF (120 kB)

Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions
S. A. Smagulova, I. V. Antonova, E. P. Neustroev, and V. A. Skuratov
pp. 546-550    Full Text: PDF (68 kB)

Diffusion of Europium in Silicon
D. É. Nazyrov
pp. 551-552    Full Text: PDF (28 kB)

Photosensitive Structures Based on CdGa₂Se₄ Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius
pp. 553-558    Full Text: PDF (87 kB)

Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu. G. Musikhin, A. F. Tsatsul'nikov, V. M. Ustinov, and N. N. Ledentsov
pp. 559-563    Full Text: PDF (105 kB)

Model of Multi-Island Single-Electron Arrays Based on the Monte Carlo Method
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 564-568    Full Text: PDF (63 kB)

Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons under Conditions of Ionized-Impurity Scattering in a Superlattice with Doped Quantum Wells
S. I. Borisenko
pp. 569-572    Full Text: PDF (57 kB)

Electronic and Optical Properties of AlAs/Al_xGa_1 – xAs(110) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 573-580    Full Text: PDF (93 kB)

Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer
G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov, G. N. Shkerdin, and N. G. Yaremenko
pp. 581-585    Full Text: PDF (69 kB)

Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells
L. E. Vorob'ev, S. N. Danilov, V. L. Zerova, and D. A. Firsov
pp. 586-593    Full Text: PDF (101 kB)

Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC
M. G. Mynbaeva, A. A. Lavrent'ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, and A. A. Lebedev
pp. 594-597    Full Text: PDF (48 kB)

Quantum-Chemical Simulation of the Influence of Defects on the Infrared Spectrum and the Electronic Structure of a-Se
A. S. Zyubin, F. V. Grigor'ev, and S. A. Dembovskii
pp. 598-603    Full Text: PDF (75 kB)

Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses
G. D. Ivlev and E. I. Gatskevich
pp. 604-610    Full Text: PDF (119 kB)

Detection of Hydrogen Impurity in Silicon Radiation Detectors
L. F. Makarenko, F. P. Korshunov, S. B. Lastovskii, and N. I. Zamyatin
pp. 611-615    Full Text: PDF (66 kB)