Semiconductors -- November 2004
Volume 38, Issue 11,
pp. 1241-1363
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon
V. G. Zavodinsky, A. A. Gnidenko, A. Misiuk, and J. Bak-Misiuk
pp. 1241-1244
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(IV2)1 x(IIIV)x Solid Solutions Obtained from a Bounded Tin MeltSolution
B. Sapaev, M. S. Saidov, A. S. Saidov, and S. Zh. Karazhanov
pp. 1245-1253
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Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO2 Thermal Oxide Using Selective Etching
M. S. Dunaevskii, J. J. Grob, A. G. Zabrodskii, R. Laiho, and A. N. Titkov
pp. 1254-1259
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On the High-Dose Effect in the Case of Ion Implantation of Silicon
D. I. Tetelbaum and A. I. Gerasimov
pp. 1260-1262
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A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors
A. P. Bibilashvili and A. B. Gerasimov
pp. 1263-1266
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals
V. V. Krivolapchuk, Yu. V. Kozhanova, V. V. Lundin, M. M. Mezdrogina, S. N. Rodin, and Sh. A. Yusupova
pp. 1267-1274
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Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnSCu
T. A. Kuchakova, G. V. Vesna, and V. A. Makara
pp. 1275-1279
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Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on MetalOrganic Complexes with Cu+ and Ru2+
E. L. Aleksandrova and N. N. Khimich
pp. 1280-1283
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A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures
E. L. Aleksandrova, M. M Dudkina, and A. V. Ten'kovtsev
pp. 1284-1290
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on HgGa2S4 Single Crystals: Preparation and Properties
V. Yu. Rud', Yu. V. Rud', B. Kh. Bairamov, G. A. Il'chuk, V. O. Ukrainets, N. Fernelius, and P. G. Shunemann
pp. 1291-1297
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Effect of Modifying a Bi Nanolayer on the Charge Transport in Sbn-SiBiGe33As12Se55Sb Heterostructures
A. B. Kondrat, N. I. Popovich, and N. I. Dovgoshej
pp. 1298-1301
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The Effect of a Thermoelectric Field on a CurrentVoltage Characteristic of the p-Gen-GaAs Heterojunction
M. M. Gadzhialiev, Z. Sh. Pirmagomedov, and T. N. Éfendieva
pp. 1302-1303
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The Effect of gamma-Ray Radiation on the Characteristics of the Interface between Silicon and LeadBorosilicate Glass
P. B. Parchinckii, S. I. Vlasov, and A. A. Nasirov
pp. 1304-1307
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Photoelectric Properties of ZnO/CuPc/Si Structures
G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1308-1311
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LOW-DIMENSIONAL SYSTEMS
Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field
Yu. A. Mityagin, V. N. Murzin, Yu. A. Efimov, A. A. Pishchulin, and V. N. Pyrkov
pp. 1312-1315
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Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes
A. I. Vedernikov and A. V. Chaplik
pp. 1316-1322
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MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility
V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, and R. Kakanakov
pp. 1323-1325
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Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping
G. B. Galiev, V. É. Kaminskii, I. S. Vasil'evskii, V. A. Kul'bachinskii, and R. A. Lunin
pp. 1326-1331
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Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTeElectrolyte System
V. B. Bozhevolnov, A. M. Yafyasov, and P. P. Konorov
pp. 1332-1339
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Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots
A. V. Tsukanov
pp. 1340-1343
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals
E. A. Konstantinova, Yu. V. Ryabchikov, L. A. Osminkina, A. S. Vorontsov, and P. K. Kashkarov
pp. 1344-1349
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PHYSICS OF SEMICONDUCTOR DEVICES
Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser
Yu. A. Morozov, I. S. Nefedov, and V. Ya. Aleshkin
pp. 1350-1355
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Properties of GaSb-Based LEDs with Grid Ohmic Contacts
A. N. Imenkov, E. A. Grebenshchikova, B. E. Zhurtanov, T. N. Danilova, M. A. Sipovskaya, N. V. Vlasenko, and Yu. P. Yakovlev
pp. 1356-1363
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