Semiconductors -- December 2004
Volume 38, Issue 12,
pp. 1365-1439
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals
V. M. Sklyarchuk and Yu. O. Plevachuk
pp. 1365-1368
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Hg1 x y zCdxMnyZnzTe: A New Alternative to Hg1 xCdxTe
I. N. Gorbatyuk, A. V. Markov, S. É. Ostapov, and I. M. Rarenko
pp. 1369-1373
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Stimulated and Spontaneous Emission of CdxHg1 xTe Structures in the Range 3.23.7 µm at 77 K
Yu. N. Nozdrin, A. V. Okomel'kov, A. P. Kotkov, A. N. Moiseev, and N. D. Grishnova
pp. 1374-1377
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Photoluminescence of ElectronHole Plasma in Semi-Insulating Undoped GaAs
V. F. Kovalenko and S. V. Shutov
pp. 1378-1380
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Effect of Hydrogen Sulfide on Photoelectric Characteristics of Aln-SiSnO2:CuAg Isotype Heterostructures
S. V. Slobodchikov[dagger], E. V. Russu, É. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov
pp. 1381-1383
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Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices
L. P. Avakyants, P. Yu. Bokov, T. P. Kolmakova, and A. V. Chervyakov
pp. 1384-1389
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Influence of Ultrashort Pulses of Electromagnetic Radiation on Parameters of MetalInsulatorSemiconductor Structures
V. A. Terekhov, A. N. Man'ko, E. N. Bormontov, V. N. Levchenko, S. Yu. Trebunskikh, E. A. Tutov, and É. P. Domashevskaya
pp. 1390-1393
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Traps with Near-Midgap Energies at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures
I. V. Antonova, V. P. Popov, V. I. Polyakov, and A. I. Rukovishnikov
pp. 1394-1399
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Kinetics of the Growth of an Amorphous Layer at the Surface of Silicon Bombarded with Fast Heavy Ions at Low Temperatures
A. Yu. Azarov
pp. 1400-1401
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LOW-DIMENSIONAL SYSTEMS
Formation and Optical Properties of CuInSe2xTe2(1 x) Nanoparticles in a Silicate Glass Matrix
I. V. Bodnar', N. P. Solovei, V. S. Gurin, and A. P. Molochko
pp. 1402-1408
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Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells
V. L. Zerova, V. V. Kapaev, L. E. Vorob'ev, D. A. Firsov, S. Schmidt, E. A. Zibik, A. Seilmeier, and E. Towe
pp. 1409-1415
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Size Distribution of Cobalt Nanoclusters in an Amorphous Carbon Matrix
V. I. Ivanov-Omskii, A. V. Kolobov, A. B. Lodygin, and S. G. Yastrebov
pp. 1416-1418
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PHYSICS OF SEMICONDUCTOR DEVICES
Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing SolutionMelts
A. P. Astakhova, E. A. Grebenshchikova, É. V. Ivanov, A. N. Imenkov, E. V. Kunitsyna, Ya. A. Parkhomenko, and Yu. P. Yakovlev
pp. 1419-1425
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Luminescence Properties of Cylindrical ZnO Microcavities
A. N. Gruzintsev, V. T. Volkov, S. V. Dubonos, M. A. Knyazev, and E. E. Yakimov
pp. 1426-1429
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Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov
pp. 1430-1439
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