Semiconductors -- February 2005

Ab initio Studies of the Band Parameters of III–V and II–VI Zinc-Blende Semiconductors
S. Zh. Karazhanov and L. C. Lew Yan Voon
pp. 161-173    Full Text: PDF (158 kB)

Photoreflection Studies of the Dopant Activation in InP Implanted with Be⁺ Ions
L. P. Avakyants, P. Yu. Bokov, and A. V. Chervyakov
pp. 174-176    Full Text: PDF (52 kB)

The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si
V. A. Gridchin and V. M. Lubimskii
pp. 177-181    Full Text: PDF (68 kB)

Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure
Ya. E. Pokrovskii and N. A. Khval'kovskii
pp. 182-188    Full Text: PDF (105 kB)

The Effect of Laser Radiation on the Formation of Oriented Cadmium Sulfide Layers under Highly Nonequilibrium Conditions
A. P. Belyaev, V. P. Rubets, and V. V. Antipov
pp. 189-191    Full Text: PDF (100 kB)

Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon
V. A. Gridchin, V. M. Lyubimskii, and A. G. Moiseev
pp. 192-197    Full Text: PDF (82 kB)

The Influence of a Nonlinear Electromagnetic Wave on Electric Current Density in a Surface Superlattice in a Strong Electric Field
D. V. Zav'yalov, S. V. Kryuchkov, and N. E. Meshcheryakova
pp. 198-201    Full Text: PDF (57 kB)

Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se₂ Heterojunctions
V. F. Gremenok, G. A. Il'chuk, S. E. Nikitin, V. Yu. Rud', and Yu. V. Rud'
pp. 202-205    Full Text: PDF (57 kB)

The Qualitative Difference between Mechanisms of Electroforming in Si–SiO₂–W Structures Based on n-Si and p-Si
V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin
pp. 206-213    Full Text: PDF (104 kB)

Luminescence of Multilayer Structures Based on InAsSb at lambda = 6–9 µm
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and N. G. Tarakanova
pp. 214-217    Full Text: PDF (91 kB)

Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures
G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 218-220    Full Text: PDF (48 kB)

Nonohmic Conductance and Mechanisms of Energy Relaxation in 2D Electron Gas in GaAs/InGaAs/GaAs Heterostructures
A. A. Sherstobitov, G. M. Min'kov, O. E. Rut, A. V. Germanenko, and B. N. Zvonkov
pp. 221-225    Full Text: PDF (77 kB)

Special Features of the Electron–Electron Interaction in the Potential of a Heavily Doped Al_xGa_1 – xAs:Si/GaAs Heterojunction
V. I. Kadushkin
pp. 226-230    Full Text: PDF (71 kB)

The Effect of Thickness Fluctuations on the Static Electrical Conductivity of a Semiconductor Quantum Wire
M. A. Ruvinskii and B. M. Ruvinskii
pp. 231-234    Full Text: PDF (59 kB)

Selective Electron Transfer between Quantum Dots Induced by a Resonance Pulse
L. A. Openov and A. V. Tsukanov
pp. 235-242    Full Text: PDF (92 kB)

Optical Properties of Porous Nanosized GaAs
A. I. Belogorokhov, S. A. Gavrilov, I. A. Belogorokhov, and A. A. Tikhomirov
pp. 243-248    Full Text: PDF (109 kB)

Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers
D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul'nikov, and N. N. Ledentsov
pp. 249-253    Full Text: PDF (69 kB)

Electrical Characteristics of Insulator–Conductor and Insulator–Semiconductor Macrosystems
V. A. Sotskov
pp. 254-260    Full Text: PDF (90 kB)

On the Injection Current Mechanism in Light-Emitting p–i–n Structures Based on a-Si_1 – xC_x:H Hydrogenated Amorphous Alloys
A. A. Andreev
pp. 261-264    Full Text: PDF (59 kB)

A Graded-Gap Photoelectric Detector for Ionizing Radiation
L. Dapkus, K. Pozela, J. Pozela, A. Silenas, V. Juciene, and V. Jasutis
pp. 265-268    Full Text: PDF (65 kB)

Ammonia Sensors Based on Pd–n-Si Diodes
V. I. Balyuba, V. Yu. Grisyk, T. A. Davydova, V. M. Kalygina, S. S. Nazarov, and L. S. Khludkova
pp. 269-272    Full Text: PDF (61 kB)