Semiconductors -- March 2005

Cationic Disorder in an Sr₂FeMoO₆ Binary Oxide with a Perovskite Structure
L. S. Lobanovskii, S. V. Trukhanov, M. V. Bushinskii, and I. O. Troyanchuk
pp. 273-276    Full Text: PDF (58 kB)

A Vacancy Model of the Heteropolytype Epitaxy of SiC
A. A. Lebedev and S. Yu. Davydov
pp. 277-280    Full Text: PDF (43 kB)

Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology
A. S. Il'in, A. I. Maksimov, V. A. Moshnikov, and N. P. Yaroslavtsev
pp. 281-284    Full Text: PDF (58 kB)

Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide
A. I. Kozlov, V. V. Sobolev, and A. F. Knjazev
pp. 285-288    Full Text: PDF (51 kB)

Statistics of Electrons in PbS with U Centers
S. A. Nemov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, and E. S. Khuzhakulov
pp. 289-292    Full Text: PDF (58 kB)

The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation
M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov
pp. 293-295    Full Text: PDF (48 kB)

The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders
Yu. Yu. Bacherikov, N. V. Kitsyuk, S. V. Optasyuk, and A. A. Stadnik
pp. 296-299    Full Text: PDF (54 kB)

Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with ²⁸Si, ²⁹Si, and ³⁰Si Isotopes
P. G. Sennikov, T. V. Kotereva, A. G. Kurganov, B. A. Andreev, H. Niemann, D. Schiel, V. V. Emtsev, and H.-J. Pohl
pp. 300-307    Full Text: PDF (108 kB)

The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt
T. I. Voronina, T. S. Lagunova, A. F. Lipaev, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev
pp. 308-312    Full Text: PDF (68 kB)

Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure
L. S. Berman
pp. 313-316    Full Text: PDF (53 kB)

A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces
G. F. Karavaev and V. N. Chernyshov
pp. 317-324    Full Text: PDF (100 kB)

A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under the Condition of Charge-Carrier Scattering by Acoustic Phonons
P. V. Gorskii
pp. 325-330    Full Text: PDF (68 kB)

The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se₂ Structures
G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 331-335    Full Text: PDF (87 kB)

Vegard's Law and Superstructural Phases in Al_xGa_1 – xAs/GaAs(100) Epitaxial Heterostructures
É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin, I. N. Arsent'ev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov
pp. 336-342    Full Text: PDF (176 kB)

Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films with Different Electrode Configurations
S. K. Persheyev, V. Smirnov, K. A. O'Neill, S. Reynolds, and M. J. Rose
pp. 343-346    Full Text: PDF (55 kB)

The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers of Porous Silicon during the Adsorption of Acceptor Molecules
L. A. Osminkina, E. A. Konstantinova, K. S. Sharov, P. K. Kashkarov, and V. Yu. Timoshenko
pp. 347-350    Full Text: PDF (62 kB)

The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium
A. V. Biryukov, A. G. Kazanskii, E. I. Terukov, and K. Yu. Khabarova
pp. 351-353    Full Text: PDF (56 kB)

A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures
T. T. Mnatsakanov, S. N. Yurkov, and A. G. Tandoev
pp. 354-359    Full Text: PDF (76 kB)

A Method for Measuring the Lifetime of Charge Carriers in the Base Regions of High-Speed Diode Structures
V. V. Togatov and P. A. Gnatyuk
pp. 360-363    Full Text: PDF (58 kB)

Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition
N. B. Strokan, A. M. Ivanov, E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, and G. N. Violina
pp. 364-369    Full Text: PDF (84 kB)

High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskii, T. A. Nalyot, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, and I. S. Tarasov
pp. 370-373    Full Text: PDF (112 kB)

A Review of the Book Atomy legiruyushchikh primesei v poluprovodnikakh (Atoms of Doping Impurities in Semiconductors) by V.I. Fistul' (Moscow: Fizmatlit, 2004)

pp. 374-376    Full Text: PDF (23 kB)