Semiconductors -- June 2003

Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained by Vapor-Phase Condensation
A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin, and I. P. Kalinkin
pp. 617-619    Full Text: PDF (61 kB)

Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron
D. V. Kilanov, V. P. Popov, L. N. Safronov, A. I. Nikiforov, and R. Sholz
pp. 620-624    Full Text: PDF (216 kB)

A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers
O. V. Aleksandrov and N. N. Afonin
pp. 625-631    Full Text: PDF (96 kB)

Defect Profiling in Semiconductor Layers by the Electrochemical Method
Á. Nemcsics and J. P. Makai
pp. 632-635    Full Text: PDF (97 kB)

X-ray Photoelectron Spectroscopy and X-ray Electron-Microprobe Analysis of Single Crystals Based on Bismuth Telluride
I. V. Gasenkova, V. A. Chubarenko^[dagger], E. A. Tyavlovskaya, and T. E. Svechnikova
pp. 636-640    Full Text: PDF (65 kB)

Photovoltaic Effects in CdV₂S₄ Single Crystals and Structures Based on Them
A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius
pp. 641-645    Full Text: PDF (76 kB)

Electrical Properties of Cadmium Telluride Films Synthesized in a Thermal Field with a Temperature Gradient
A. P. Belyaev, V. P. Rubets, and M. Yu. Nuzhdin
pp. 646-648    Full Text: PDF (65 kB)

The Effects of Monovacancies on the Terrace Width during Sublimation from the (111) Surface of a Diamond-Like Crystal
A. V. Zverev, I. G. Neizvestny, N. L. Shvartz, and Z. Sh. Yanovitskaja
pp. 649-655    Full Text: PDF (349 kB)

Fabrication and Properties of ZnFe₂S₄ Single Crystals and Structures Based on Them
A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius
pp. 656-660    Full Text: PDF (80 kB)

Determination of the Absolute Value of the Semiconductor Surface Potential by the Quasi-Static Capacitance–Voltage Characteristics of an MIS Structure
A. G. Zhdan, N. F. Kukharskaya, and G. V. Chucheva
pp. 661-666    Full Text: PDF (91 kB)

Atomic-Force-Microscopy Visualization of GeSi Buried Nanoislands on Crystal Cleavages in Silicon Structures
M. S. Dunaevskii, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Titkov, and R. Laiho
pp. 667-674    Full Text: PDF (227 kB)

Determination of the Parameters of Multilayer Nanostructures Using Two-Wave X-ray Reflectometry
N. L. Popov, Yu. A. Uspenskii, A. G. Turyanskii, I. V. Pirshin, A. V. Vinogradov, and Yu. Ya. Platonov
pp. 675-680    Full Text: PDF (90 kB)

Superradiance in Quantum Heterostructures
A. I. Klimovskaya, Yu. A. Driga, E. G. Gule, and O. O. Pikaruk
pp. 681-685    Full Text: PDF (76 kB)

Electron Transport in Coupled Quantum Wells with Double-Sided Doping
G. B. Galiev, V. E. Kaminskii, V. G. Mokerov, V. A. Kul'bachinskii, R. A. Lunin, I. S. Vasil'evskii, and A. V. Derkach
pp. 686-691    Full Text: PDF (79 kB)

Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression of Resonance Tunneling in a Magnetic Field as a Manifestation of the Coulomb Gap in the Tunnel Density of States
Yu. N. Khanin, Yu. V. Dubrovskii, and E. E. Vdovin
pp. 692-698    Full Text: PDF (100 kB)

Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures
M. Ya. Valakh, N. V. Vuychik, V. V. Strelchuk, S. V. Sorokin, T. V. Shubina, S. V. Ivanov, and P. S. Kop'ev
pp. 699-704    Full Text: PDF (79 kB)

Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas
A. A. Sherstobitov, G. M. Minkov, O. É. Rut, A. V. Germanenko, B. N. Zvonkov, E. A. Uskova, and A. A. Biryukov
pp. 705-709    Full Text: PDF (72 kB)

On the Temperature Dependence of the dc Conductivity of a Semiconductor Quantum Wire in an Insulator
N. A. Poklonskii, E. F. Kislyakov, and S. A. Vyrko
pp. 710-712    Full Text: PDF (48 kB)

The Effect of Implantation of P Ions on the Photoluminescence of Si Nanocrystals in SiO₂ Layers
G. A. Kachurin, S. G. Yanovskaya, D. I. Tetelbaum, and A. N. Mikhailov
pp. 713-717    Full Text: PDF (77 kB)

Interband Absorption of Light in Semiconductor Nanostructures
S. I. Pokutnyi
pp. 718-722    Full Text: PDF (61 kB)

Modification of the Nanostructure of Diamond-like Carbon Films by Bombardment with Xenon Ions
I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov, and I. B. Khaibullin
pp. 723-726    Full Text: PDF (60 kB)

Effect of Illumination on the Rate of Relaxation of Light-induced Metastable States in a-Si:H(B)
I. A. Kurova, N. N. Ormont, and A. L. Gromadin
pp. 727-729    Full Text: PDF (45 kB)

Efficient Silicon Light-Emitting Diode with Temperature-Stable Spectral Characteristics
A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova, and S. Pizzini
pp. 730-735    Full Text: PDF (85 kB)

Mid-Infrared (lambda = 2.775 µm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
S. V. Ivanov, K. D. Moiseev, V. A. Kaigorodov, V. A. Solov'ev, S. V. Sorokin, B. Ya. Meltser, E. A. Grebenshchikova, I. V. Sedova, Ya. V. Terent'ev, A. N. Semenov, A. P. Astakhova, M. P. Mikhailova, A. A. Toropov, Yu. P. Yakovlev, P. S. Kop'ev, and Zh. I. Alferov
pp. 736-739    Full Text: PDF (89 kB)