Semiconductors -- July 2003
Volume 37, Issue 7,
pp. 741-865
CONFERENCE. REVIEW
III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002)
E. I. Terukov (the Chairperson of Organizing Committee of the Conference)
pp. 741-743
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CONFERENCE. ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electron Diffraction Investigation of Structural Diversity of Amorphous Films of Polymorphic TlInS2
D. I. Ismailov, M. V. Alieva, E. Sh. Alekperov, and F. I. Aliev
pp. 744-747
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The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric and Nonstoichiometric Arsenic Sulfide
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, and I. N. Trapeznikova
pp. 748-750
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Spectra of Fundamental Optical Functions of BeSe
V. Val. Sobolev and V. V. Sobolev
pp. 751-756
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Optical Properties of Imperfect In2Se3
V. Val. Sobolev and V. V. Sobolev
pp. 757-762
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CONFERENCE. SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Spectral Photosensitivity of a-SiGe:H/c-Si Heterostructures
A. A. Sherchenkov
pp. 763-765
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CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 766-768
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On Studying Nanoporous-Carbon-Based Composites by Small-Angle X-Ray Scattering
É. A. Smorgonskaya
pp. 769-774
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Fullerene Single Crystals as Adsorbents of Organic Compounds
V. I. Berezkin, I. V. Viktorovskii, A. Ya. Vul', L. V. Golubev, V. N. Petrova, and L. O. Khoroshko
pp. 775-783
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X-Raying Studies of the Nanoporous Carbon Structure Produced from Carbide Materials
R. N. Kyutt, A. M. Danishevskii, É. A. Smorgonskaya, and S. K. Gordeev
pp. 784-788
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The Influence of Deposition Conditions and Alloying on the Electronic Properties of Amorphous Selenium
S. O. Kasap, K. V. Koughia, B. Fogal, G. Belev, and R. E. Johanson
pp. 789-794
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Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses
L. A. Kulakova, B. T. Melekh, V. I. Bakharev, and V. Kh. Kudoyarova
pp. 795-799
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Effect of Rare-Earth Impurities on the Photoluminescence of Ge2S3 Glass
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, and I. N. Trapeznikova
pp. 800-802
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Influence of the Order–Disorder Transition in the Crystal Electron Subsystem on the Electron Density at Lattice Sites
N. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, V. P. Volkov, P. P. Seregin, and N. N. Troitskaya
pp. 803-806
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Organic Materials for Photovoltaic and Light-Emitting Devices
T. A. Yourre, L. I. Rudaya, N. V. Klimova, and V. V. Shamanin
pp. 807-815
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Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium
É. A. Lebedev, M. Ya. Goikhman, M. E. Kompan, V. Kh. Kudoyarova, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev
pp. 816-817
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Photosensitivity of New Photoconductive Polymers Based on Ruthenium–Biquinolyl Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, I. V. Gofman, and V. V. Kudryavtsev
pp. 818-820
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Optical and Photosensitive Properties of Comb-Shaped Polyamide-Imides
E. L. Aleksandrova, M. Ya. Goikhman, L. I. Subbotina, K. A. Romashkova, I. F. Gofman, V. V. Kudryavtsev, and A. V. Yakimanskii
pp. 821-824
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A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence in Amorphous SiOx:(H, Er) Films Formed by DC Magnetron Sputtering
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova
pp. 825-831
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CONFERENCE. PHYSICS OF SEMICONDUCTOR DEVICES
Splitting of Resonant Optical Modes in Fabry–Perot Microcavities
V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel'kin, and N. A. Feoktistov
pp. 832-837
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ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
The Use of Magnesium to Dope Gallium Nitride Obtained by Molecular-Beam Epitaxy from Activated Nitrogen
A. A. Vorob'ev, V. V. Korablev, and S. Yu. Karpov
pp. 838-842
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Simulation of Growth Kinetics of Octahedral and Platelike Oxygen Precipitates in Silicon
V. V. Svetukhin, A. G. Grishin, and O. V. Prikhod'ko
pp. 843-845
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 846-854
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Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
V. G. Dubrovskii, V. A. Egorov, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, N. V. Kryzhanovskaya, A. F. Tsatsul'nikov, and V. M. Ustinov
pp. 855-860
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LOW-DIMENSIONAL SYSTEMS
Control over the Parameters of InAs–GaAs Quantum Dot Arrays in the Stranski–Krastanow Growth Mode
N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, N. V. Lukovskaya, Yu. G. Musikhin, G. E. Cirlin, N. A. Bert, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
pp. 861-865
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