Semiconductors -- August 2003
Volume 37, Issue 8,
pp. 867-997
The Role of Dmitrii Nikolaevich Nasledov in the Formation and Development of the Physics and Technology of III–V Semiconductors
O. V. Emel'yanenko, N. M. Kolchanova, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 867-871
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
ESR of Interacting Manganese Centers in Gallium Arsenide
K. F. Shtel'makh, M. P. Korobkov, and I. G. Ozerov
pp. 872-875
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Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
T. S. Lagunova, T. I. Voronina, M. P. Mikhailova, K. D. Moiseev, E. Samokhin, and Yu. P. Yakovlev
pp. 876-883
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Analysis of the Emission Band of VGaTeAs Complexes in n-GaAs under Uniaxial Pressure
A. A. Gutkin and A. V. Ermakova
pp. 884-888
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A Mössbauer Study of Fe Impurity Atoms in Gallium Arsenide
P. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, and V. P. Volkov
pp. 889-893
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Rare-Earth Elements in the Technology of III–V Compounds and Devices Based on These Compounds
A. T. Gorelenok, A. V. Kamanin, and N. M. Shmidt
pp. 894-914
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Electromagnetic Effect in High-Temperature Superconductivity: 15 Years of Investigations (1987–2002) at the Department of Experimental Physics of St. Petersburg State Technical University
A. V. Prikhod'ko
pp. 915-917
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The Relaxation of the Neutral State of Manganese in Gallium Arsenide
V. F. Masterov[dagger], K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, and B. E. Samorukov
pp. 918-922
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on Boron Phosphide Single Crystals
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 923-926
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Negative Luminescence at 3.9 µm in InGaAsSb-Based Diodes
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 927-930
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Wet Chemical Nitridation of (100)GaAs Surface: Effect on Electrical Parameters of Surface-Barrier Au–Ti/GaAs Structures
T. V. L'vova, V. L. Berkovits, M. S. Dunaevskii, V. M. Lantratov, I. V. Makarenko, and V. P. Ulin
pp. 931-935
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On the Charge-Transport Mechanisms in Cr–n-InP and Mo–n-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov
pp. 936-939
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LOW-DIMENSIONAL SYSTEMS
Raman and Infrared Spectroscopy of GaN Nanocrystals Grown by Chloride-Hydride Vapor-Phase Epitaxy on Oxidized Silicon
V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, V. A. Fedirko, and D. R. T. Zahn
pp. 940-943
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PHYSICS OF SEMICONDUCTOR DEVICES
Ultraviolet Radiation Photodetectors Based on Structures Consisting of a Metal and a Wide-Bandgap Semiconductor
T. V. Blank, Yu. A. Gol'dberg, E. V. Kalinina, O. V. Konstantinov, and E. A. Posse
pp. 944-948
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High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-µm Spectral Range with a Large-Diameter Active Area
I. A. Andreev, N. D. Il'inskaya, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 949-954
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Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. I. Voronina, T. S. Lagunova, B. V. Pushnyi, and Yu. P. Yakovlev
pp. 955-959
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Single-Mode Fast-Tunable Lasers for Laser-Diode Spectroscopy
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 960-970
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High-Efficiency LEDs of 1.6–2.4 µm Spectral Range for Medical Diagnostics and Environment Monitoring
N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, A. N. Imenkov, and Yu. P. Yakovlev
pp. 971-984
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Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
K. D. Moiseev, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 985-991
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LOW-DIMENSIONAL SYSTEMS
Synchrotron Investigations of an Electron Energy Spectrum in III–V-Based Nanostructures
É. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov, S. Yu. Turishchev, S. L. Molodtsov, D. V. Vyalykh, D. A. Vinokurov, V. P. Ulin, M. V. Shishkov, I. N. Arsent'ev, I. S. Tarasov, and Zh. I. Alferov
pp. 992-997
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