Semiconductors -- September 2003

Semiconductor Photoelectric Converters for the Ultraviolet Region of the Spectrum
T. V. Blank and Yu. A. Gol'dberg
pp. 999-1030    Full Text: PDF (327 kB)

Diffusion of Ytterbium in Silicon
D. É. Nazyrov
pp. 1031-1032    Full Text: PDF (31 kB)

Migration Energy of Vacancies in p-Type Silicon Crystals
T. A. Pagava and Z. V. Basheleishvili
pp. 1033-1036    Full Text: PDF (68 kB)

Thermal Stability and Transformation of C₆₀ Molecules Deposited on Silicon-Coated (111) Iridium
N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode
pp. 1037-1041    Full Text: PDF (91 kB)

Microphotoluminescence Spectra of Cadmium Telluride Grown under Nonequilibrium Conditions
V. V. Ushakov and Yu. V. Klevkov
pp. 1042-1046    Full Text: PDF (190 kB)

Effect of Growth Conditions on Incorporation of Si into Ga and As Sublattices of GaAs During Molecular-Beam Epitaxy
I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, and S. E. Toropov
pp. 1047-1052    Full Text: PDF (80 kB)

Intervalley Redistribution of Electrons at Low Temperatures and the Magnetodiode Effect
A. A. Abramov and I. N. Gorbatyi
pp. 1053-1056    Full Text: PDF (55 kB)

Electrical and Thermoelectric Properties of p-Ag₂Te in the beta Phase
F. F. Aliev
pp. 1057-1060    Full Text: PDF (58 kB)

Local Symmetry and Electronic Structure of Tin Atoms in (Pb_1–xSn_x)_1–zIn_zTe Lattices
S. A. Nemov, Yu. V. Kozhanova, P. P. Seregin, N. P. Seregin, and D. V. Shamshur
pp. 1061-1062    Full Text: PDF (39 kB)

Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 1063-1069    Full Text: PDF (122 kB)

On the Nernst Coefficient of Binary Composites in a Weak Magnetic Field
B. Ya. Balagurov
pp. 1070-1075    Full Text: PDF (77 kB)

Effect of Electron Irradiation on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon
A. G. Kazanskii, P. A. Forsh, K. Yu. Khabarova, and M. V. Chukichev
pp. 1076-1079    Full Text: PDF (55 kB)

Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
L. S. Vavilova, D. A. Vinokurov, V. A. Kapitonov, A. V. Murashova, V. N. Nevedomskii, N. K. Poletaev, A. A. Sitnikova, I. S. Tarasov, and V. V. Shamakhov
pp. 1080-1084    Full Text: PDF (254 kB)

Carrier Multiplication in Silicon P–N Junctions
Yu. N. Serezhkin and A. A. Shesterkina
pp. 1085-1089    Full Text: PDF (62 kB)

Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width in GaAs/AlGaAs Structures
Yu. L. Ivanov, P. V. Petrov, A. A. Tonkikh, G. É. Tsyrlin, and V. M. Ustinov
pp. 1090-1092    Full Text: PDF (48 kB)

Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice with Doped Quantum Wells
S. I. Borisenko
pp. 1093-1099    Full Text: PDF (85 kB)

Effective Cross Section for Photoluminescence Excitation and Lifetime of Excited Er³⁺ Ions in Selectively Doped Multilayer Si:Er Structures
S. V. Gastev, A.M. Emel'yanov, N. A. Sobolev, B. A. Andreev, Z. F. Krasil'nik, and V. B. Shmagin
pp. 1100-1103    Full Text: PDF (49 kB)

Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
E. S. Semenova, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. R. Kovsh, V. M. Ustinov, Yu. G. Musikhin, S. A. Blokhin, A. G. Gladyshev, and N. N. Ledentsov
pp. 1104-1106    Full Text: PDF (236 kB)

Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
S. S. Mamakin, A. É. Yunovich, A. B. Wattana, and F. I. Manyakhin
pp. 1107-1113    Full Text: PDF (111 kB)

Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs by Rapid Thermal Annealing
N. S. Boltovets, V. N. Ivanov, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, V. V. Milenin, and I. V. Prokopenko
pp. 1114-1118    Full Text: PDF (278 kB)

Metamorphic Lasers for 1.3-µm Spectral Range Grown on GaAs Substrates by MBE
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil'ev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, Yu. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov
pp. 1119-1122    Full Text: PDF (103 kB)

On the Fast Recovery of the Blocking Property of Silicon Carbide Diodes
I. V. Grekhov, A. S. Kyuregyan, T. T. Mnatsakanov, and S. N. Yurkov
pp. 1123-1126    Full Text: PDF (60 kB)