Semiconductors -- October 2003
Volume 37, Issue 10,
pp. 1127-1242
REVIEW
Modification of Hg1 xCdxTe Properties by Low-Energy Ions
K. D. Mynbaev and V. I. Ivanov-Omskii
pp. 1127-1150
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ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Thermodynamic Stability of GaInSb, InAsSb, and GaInP Epitaxial Films
V. G. Deibuk
pp. 1151-1155
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Kinetics of Ambipolar Diffusion and Drift Currents of Nonequilibrium Carriers in Semiconductors
A. A. Abdullaev, A. R. Aliev, and I. K. Kamilov
pp. 1156-1159
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A Study of Linear Dichroism Induced by Uniaxial Strain in Silicon Crystals
E. F. Venger, I. E. Matyash, and B. K. Serdega
pp. 1160-1164
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Photoluminescence from Amorphous Carbon Grown by Laser Ablation of Graphite
S. G. Yastrebov, V. I. Ivanov-Omskii, and A. Richter
pp. 1165-1168
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SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Photodeposition of Silver at the Interface of a Heterojunction Based on a Solid Electrolyte: The Case of CdSeAs2S3:Agx (x = 0.92.4) Heterojunctions
A. I. Stetsun
pp. 1169-1176
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Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air
N. A. Torkhov
pp. 1177-1184
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Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, I. Oswald, E. Hulicius, J. Pangrac, and T. Simecek
pp. 1185-1189
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LOW-DIMENSIONAL SYSTEMS
Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated with an Ultrathin SiO2 Layer
V. A. Volodin, M. D. Efremov, A. I. Nikiforov, D. A. Orekhov, O. P. Pchelyakov, and V. V. Ul'yanov
pp. 1190-1194
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Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field
V. M. Kovalev and A. V. Chaplik
pp. 1195-1200
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Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 1201-1204
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The X+ Trion in a System with Spatial Separation of the Charge Carriers
R. A. Sergeev and R. A. Suris
pp. 1205-1210
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Spectral Ellipsometry of Amorphous Hydrogenated Carbon Grown by Magnetron Sputtering of Graphite
S. G. Yastrebov, M. Garriga, M. I. Alonso, and V. I. Ivanov-Omskii
pp. 1211-1213
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Transient Photocurrent and Photoluminescence in Porous Silicon
N. S. Averkiev, L. P. Kazakova, Yu. P. Piryatinskii, and N. N. Smirnova
pp. 1214-1216
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PHYSICS OF SEMICONDUCTOR DEVICES
Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
V. G. Mokerov, Yu. K. Pozela, and Yu. V. Fedorov
pp. 1217-1221
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Silicon-on-Insulator Nanotransistors: Prospects and Problems of Fabrication
O. V. Naumova, I. V. Antonova, V. P. Popov, Yu. V. Nastaushev, T. A. Gavrilova, L. V. Litvin, and A. L. Aseev
pp. 1222-1228
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Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers
E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, A. M. Strel'chuk, A. Hallén, A. O. Konstantinov, V. V. Luchinin, and A. Yu. Nikiforov
pp. 1229-1233
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Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors
N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. G. Kuz'menkov, D. A. Bedarev, Yu. M. Zadiranov, M. M. Kulagina, Yu. M. Shernyakov, A. S. Shulenkov, V. A. Bykovskii, Yu. M. Solov'ev, C. Möller, N. N. Ledentsov, and V. M. Ustinov
pp. 1234-1238
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Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 µm
I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil'ev, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
pp. 1239-1242
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