Semiconductors -- November 2003

Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites
N. I. Medvedeva, E. I. Yur'eva, and A. L. Ivanovskii
pp. 1243-1246    Full Text: PDF (63 kB)

Optical and Thermal Properties of CuAl_xIn_1 – xTe₂ Solid Solutions
I. V. Bodnar'
pp. 1247-1251    Full Text: PDF (73 kB)

Defect-Related Luminescence of GaN:Zn Films Thermally Treated in a Radio-Frequency Ammonia Plasma
G. A. Sukach, V. V. Kidalov, A. I. Vlasenko, and E. P. Potapenko
pp. 1252-1256    Full Text: PDF (63 kB)

Effective Electron Mass in a Mn_xHg_1 – xTe System
I. M. Nesmelova
pp. 1257-1258    Full Text: PDF (29 kB)

Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions
V. V. Ushakov and Yu. V. Klevkov
pp. 1259-1263    Full Text: PDF (295 kB)

Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy on Porous GaAs(111) Substrates
V. V. Kidalov, G. A. Sukach, A. S. Revenko, and E. P. Potapenko
pp. 1264-1265    Full Text: PDF (30 kB)

Hopping Polarization Photoconductivity of Silicon with the Involvement of Impurity Pairs of Groups III and V
Ya. E. Pokrovskii and N. A. Khval'kovskii
pp. 1266-1274    Full Text: PDF (133 kB)

Defect Formation in PbTe under the Action of a Laser Shock Wave
V. S. Yakovyna, D. M. Zayachuk, and N. N. Berchenko
pp. 1275-1277    Full Text: PDF (42 kB)

Galvanomagnetic Effects in Atomic-Disordered HgSe_1 – xS_x Compounds
A. E. Kar'kin, V. V. Shchennikov, S. E. Danilov, V. A. Arbuzov, and B. N. Goshchitskii
pp. 1278-1282    Full Text: PDF (74 kB)

Photosensitive Structure on CdGa₂S₄ Single Crystals
V. Yu. Rud', Yu. V. Rud', A. A. Vaipolin, I. V. Bodnar', and N. Fernelius
pp. 1283-1290    Full Text: PDF (115 kB)

Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1291-1295    Full Text: PDF (77 kB)

The Thermoelectric Power of a Semiconductor p–n Heterojunction
M. M. Gadzhialiev and Z. Sh. Pirmagomedov
pp. 1296-1298    Full Text: PDF (45 kB)

On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus
A. V. Oleinich-Lysyuk, N. P. Beshley, and I. M. Fodchuk
pp. 1299-1302    Full Text: PDF (55 kB)

Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures
I. V. Antonova, V. A. Stuchinskii, O. V. Naumova, D. V. Nikolaev, and V. P. Popov
pp. 1303-1307    Full Text: PDF (69 kB)

Photosensitive Structures Based on In₂S₃ Crystals
I. V. Bodnar', V. A. Polubok, V. Yu. Rud', and Yu. V. Rud'
pp. 1308-1310    Full Text: PDF (50 kB)

Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors
V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, and D. A. Palishkin
pp. 1311-1314    Full Text: PDF (51 kB)

Pulsed-Laser Modification of Germanium Nanoclusters in Silicon
V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenskii, M. D. Efremov, G. D. Ivlev, A. I. Nikiforov, D. A. Orekhov, and A. I. Yakimov
pp. 1315-1320    Full Text: PDF (80 kB)

Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film
E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva, S. M. Repinskii, and M. Voelskow
pp. 1321-1325    Full Text: PDF (73 kB)

Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix
N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul'nikov, H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, and V. M. Ustinov
pp. 1326-1330    Full Text: PDF (107 kB)

Spontaneous Formation of the Periodic Composition-Modulated Nanostructure in Cd_xHg_1 – xTe Films
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, A. F. Kravchenko, A. V. Latyshev, N. N. Mikchailov, I. V. Sabinina, Yu. G. Sidorov, and M. V. Yakushev
pp. 1331-1335    Full Text: PDF (132 kB)

Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures
M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuychik, S. V. Ivanov, A. A. Toropov, T. V. Shubina, and P. S. Kop'ev
pp. 1336-1341    Full Text: PDF (81 kB)

Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring
D. I. Tetelbaum, A. A. Ezhevskii, and A. N. Mikhaylov
pp. 1342-1344    Full Text: PDF (45 kB)

Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5 µm) Region
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, and S. A. Tiis
pp. 1345-1349    Full Text: PDF (185 kB)

Thermoelements with Side Heat Exchange
A. A. Ashcheulov, V. G. Okhrem, and E. A. Okhrem
pp. 1350-1355    Full Text: PDF (74 kB)

1.7–1.8 µm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov
pp. 1356-1362    Full Text: PDF (99 kB)