Semiconductors -- December 2003

Redistribution of Ytterbium and Oxygen in Annealing of Silicon Layers Amorphized by Implantation
O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, R. Asomoza, Yu. Kudriavtsev, A. Villegas, and A. Godines
pp. 1363-1366    Full Text: PDF (69 kB)

Two-Electron Tin Centers Formed in Lead Chalcogenides as a Result of Nuclear Transmutations
S. A. Nemov, P. P. Seregin, Yu. V. Kozhanova, and N. P. Seregin
pp. 1367-1372    Full Text: PDF (102 kB)

Specific Features of Conductivity of Cd_1 – xZn_xTe and Cd_1 – xMn_xTe Single Crystals
L. A. Kosyachenko, A. V. Markov, E. L. Maslyanchuk, I. M. Rarenko, and V. M. Sklyarchuk
pp. 1373-1379    Full Text: PDF (114 kB)

Photoluminescence at 1.5 µm from Single-Crystal Silicon Layers Subjected to Mechanical Treatment
R. I. Batalov, R. M. Bayazitov, B. A. Andreev, D. I. Kryzhkov, E. I. Terukov, and V. Kh. Kudoyarova
pp. 1380-1382    Full Text: PDF (47 kB)

Investigation of the ZnS–CdHgTe Interface
P. V. Biryulin, S. A. Dudko, S. A. Konovalov, Yu. A. Pelevin, and V. I. Turinov
pp. 1383-1386    Full Text: PDF (66 kB)

Mechanisms of Photocurrent Generation in In₂O₃–InSe Heterojunctions
V. P. Makhniy and O. I. Yanchuk
pp. 1387-1389    Full Text: PDF (41 kB)

Spin Depolarization in Spontaneously Polarized Low-Dimensional Systems
I. A. Shelykh, N. T. Bagraev, and L. E. Klyachkin
pp. 1390-1399    Full Text: PDF (121 kB)

Fabrication and Optical Properties of Photonic Crystals Based on Opal–GaP and Opal–GaPN Composites
G. M. Gadzhiev, V. G. Golubev, M. V. Zamoryanskaya, D. A. Kurdyukov, A. V. Medvedev, J. Merz, A. Mintairov, A. B. Pevtsov, A. V. Sel'kin, V. V. Travnikov, and N. V. Sharenkova
pp. 1400-1405    Full Text: PDF (81 kB)

Room-Temperature 1.5–1.6 µm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov, and P. Werner
pp. 1406-1410    Full Text: PDF (182 kB)

Lasing at 1.5 µm in Quantum Dot Structures on GaAs Substrates
A. E. Zhukov, A. P. Vasil'yev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryjanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov
pp. 1411-1413    Full Text: PDF (63 kB)

Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates
E. A. Grebenshchikova, A. N. Imenkov, B. E. Zhurtanov, T. N. Danilova, A. V. Chernyaev, N. V. Vlasenko, and Yu. P. Yakovlev
pp. 1414-1420    Full Text: PDF (88 kB)

MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, N. V. Fetisova, V. V. Shamakhov, and I. S. Tarasov
pp. 1421-1424    Full Text: PDF (53 kB)

Picosecond High-Voltage Drift Diodes Based on Gallium Arsenide
A. V. Rozhkov and V. A. Kozlov
pp. 1425-1427    Full Text: PDF (83 kB)

Impact-Ionization Wave Breakdown and Generation of Picosecond Pulses in the Ultrahigh-Frequency Band in GaAs Drift Step-Recovery Diodes
V. A. Kozlov, A. V. Rozhkov, and A. F. Kardo-Sysoev
pp. 1428-1429    Full Text: PDF (125 kB)

Vladimir Idelevich Perel' (On His 75th Birthday)

p. 1430    Full Text: PDF (74 kB)