Semiconductors -- February 2004
Volume 38, Issue 2,
pp. 125-244
REVIEW
Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films
A. A. Lebedev, A. M. Ivanov, and N. B. Strokan
pp. 125-147
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ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Molecular-Beam Epitaxy Doping of Gallium Nitride with Magnesium from Ammonia
A. A. Vorob'ev, V. V. Korablev, and S. Yu. Karpov
pp. 148-149
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A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum
S. Yu. Davydov, A. A. Lebedev, N. S. Savkina, M. Syvajarvi, and R. Yakimova
pp. 150-152
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Adsorption of Solvated Hydrosulfide Ions at a GaAs(100) Surface: The Role of a Solvent in Surface Structure Modification
M. V. Lebedev, Th. Mayer, and W. Jaegermann
pp. 153-160
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
CurrentVoltage Characteristics of MnIn2S4 and MnGa2S4 Single Crystals
N. N. Niftiev and O. B. Tagiev
pp. 161-162
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Electrical Properties of MnIn2S4 Single Crystals
N. N. Niftiev
pp. 163-164
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Photosensitive Structures Based on the Compound AgIn11S17
I. V. Bodnar', V. Yu. Rud', and Yu. V. Rud'
pp. 165-168
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Magnetic Properties of Germanium-Doped Cadmium Telluride
Yu. V. Shaldin, I. Warchulska, and Yu. M. Ivanov
pp. 169-174
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Nonlinearity of the Piezoresistive Effect in Polycrystalline Silicon Films
V. A. Gridchin and V. M. Lubimsky
pp. 175-181
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Impurity States of Tin in Bi2Te3 xSex (x = 0.06, 0.12) Solid Solutions
M. K. Zhitinskaya, S. A. Nemov, T. E. Svechnikova, and E. Müller
pp. 182-184
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Observation of the Bose Condensation of Cooper Pairs in (Pb1 xSnx)1 zInzTe Semiconductor Solid Solutions
S. A. Nemov, P. P. Seregin, V. P. Volkov, N. P. Seregin, and D. V. Shamshur
pp. 185-188
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Substitutional 3d Impurities in Cubic Silicon Carbide
I. I. Parfenova
pp. 189-191
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The Nature of Low-Temperature Hysteresis of Hopping Magnetoresistance in Compensated Ge:Ga in the Vicinity of the MetalInsulator Transition
S. V. Egorov, A. G. Zabrodskii, and R. V. Parfen'ev
pp. 192-196
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Structures Based on Cu(Ag)InnSm Semiconductor Compounds
I. V. Bodnar', V. A. Polubok, V. Yu. Rud', Yu. V. Rud', and M. S. Serginov
pp. 197-201
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LOW-DIMENSIONAL SYSTEMS
Phonon Scattering of Quasi-Two-Dimensional Electrons in GaAs/AlxGa1 xAs Superlattices
S. I. Borisenko
pp. 202-208
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Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots
T. V. Bezyazychnaya, V. M. Zelenkovskii, G. I. Ryabtsev, and M. M. Sobolev
pp. 209-212
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Normal-Incidence Responsivity of MOCVD-Grown Multiple Quantum Well Structures
V. B. Kulikov, G. H. Avetisyan, L. M. Vasilevskaya, I. D. Zalevskii, I. V. Budkin, and A. A. Padalitsa
pp. 213-216
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Energy Structure of A+ Centers in Quantum Wells
N. S. Averkiev, A. E. Zhukov, Yu. L. Ivanov, P. V. Petrov, K. S. Romanov, A. A. Tonkikh, V. M. Ustinov, and G. E. Tsyrlin
pp. 217-220
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TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films
V. P. Afanasiev, A. S. Gudovskikh, A. Z. Kazak-Kazakevich, A. P. Sazanov, I. N. Trapeznikova, and E. I. Terukov
pp. 221-224
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Spectroscopy of Excitonic Polaritons in Strained IIVI Semiconductor Structures with Wide Quantum Wells
S. A. Markov, R. P. Seisyan, and V. A. Kosobukin
pp. 225-231
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PHYSICS OF SEMICONDUCTOR DEVICES
Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel
V. A. Gergel', Yu. V. Gulyaev, A. P. Zelenyi, and M. N. Yakupov
pp. 232-236
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Experimental Study of SiC pin Diodes in the 3-cm Range
K. V. Vasilevskii, P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov
pp. 237-238
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Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
A. A. Afonenko, V. Ya. Aleshkin, and A. A. Dubinov
pp. 239-242
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PERSONALIA
Vitalii Ivanovich Stafeev (on his 75th birthday)
pp. 243-244
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