Semiconductors -- March 2004

Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized Regions of Semiconductor
S. V. Vintsents, A. V. Zaitseva, V. B. Zaitsev, and G. S. Plotnikov
pp. 245-252    Full Text: PDF (148 kB)

Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing
M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov
pp. 253-257    Full Text: PDF (69 kB)

Simulation of the Concentration Dependence of Boron Diffusion in Silicon
O. V. Aleksandrov
pp. 258-261    Full Text: PDF (55 kB)

Chromium Diffusion in Gallium Arsenide
S. S. Khludkov, O. B. Koretskaya, and A. V. Tyazhev
pp. 262-265    Full Text: PDF (50 kB)

Special Features of Sb₂ and Sb₄ Incorporation in MBE-Grown AlGaAsSb Alloys
A. N. Semenov, V. S. Sorokin, V. A. Solov'ev, B. Ya. Mel'tser, and S. V. Ivanov
pp. 266-272    Full Text: PDF (82 kB)

Determination of Gallium Concentration in Germanium Doped Using Neutron-Induced Nuclear Transmutation from Measurements of Resistivity in the Region of Hopping Conductivity
O. P. Ermolaev and T. Yu. Mikul'chik
pp. 273-276    Full Text: PDF (54 kB)

Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium
T. S. Shamirzaev, K. S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J. Z. Domagala, and J. Adamczewska
pp. 277-280    Full Text: PDF (48 kB)

Impedance of Solid Solutions Based on Gallium-Doped Lead Telluride
B. A. Akimov, V. V. Pryadun, L. I. Ryabova, and D. R. Khokhlov
pp. 281-283    Full Text: PDF (44 kB)

Role of Space Charge in the Resistance Formation in a Bipolar Semiconductor Sample
A. Konin
pp. 284-287    Full Text: PDF (51 kB)

Magnetic Investigations of Cd_1 – xZn_xTe (x = 0.12, 0.21) Wide-Gap Semiconductors
Yu. V. Shaldin, I. Warchulska, M. Kh. Rabadanov, and V. K. Komar'
pp. 288-292    Full Text: PDF (68 kB)

Transport Phenomena in Coarse-Grain CdTe Polycrystals
S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov
pp. 293-297    Full Text: PDF (66 kB)

A Critical Analysis of Investigation of Deep Levels in High-Resistivity CdS Single Crystals by Photoelectric Transient Spectroscopy
A. P. Odrinskii
pp. 298-303    Full Text: PDF (77 kB)

The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions
A. V. Voznyy and V. G. Deibuk
pp. 304-309    Full Text: PDF (122 kB)

Optical Properties of Polycrystalline Zinc Selenide
A. N. Bryzgalov, V. V. Musatov, and V. V. Buz'ko
pp. 310-312    Full Text: PDF (31 kB)

Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge⁺ Ions
V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin, and T. G. Yugova
pp. 313-318    Full Text: PDF (172 kB)

Native Disorder Potential at the Surface of a Heavily Doped Semiconductor
V. B. Bondarenko, V. V. Korablev, and Yu. I. Ravich
pp. 319-321    Full Text: PDF (45 kB)

Spectral Line Broadening in Quantum Wells due to the Coulomb Interaction of Carriers
A. A. Afonenko
pp. 322-328    Full Text: PDF (90 kB)

Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
V. G. Dubrovskii, Yu. G. Musikhin, G. É. Cirlin, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, A. A. Tonkikh, N. V. Kryzhanovskaya, N. A. Bert, and V. M. Ustinov
pp. 329-334    Full Text: PDF (191 kB)

Quantum Confined Stark Effect and Electroabsorption in Semiconductor Spherical Layers
V. A. Arutyunyan, K. S. Aramyan, and G. Sh. Petrosyan
pp. 335-339    Full Text: PDF (70 kB)

Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, and D. Bimberg
pp. 340-343    Full Text: PDF (205 kB)

Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films
S. K. Persheyev, P. R. Drapacz, M. J. Rose, and A. G. Fitzgerald
pp. 344-346    Full Text: PDF (46 kB)

Temperature Dependence of Electroluminescence of Er Ions in Tunnel Diodes Based on (111)Si:(Er, O)
A. M. Emel'yanov and N. A. Sobolev
pp. 347-351    Full Text: PDF (63 kB)

Blue–Green Radiation in GaAs-Based Quantum-Well Lasers
N. V. Baidus', A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, and V. Ya. Aleshkin
pp. 352-354    Full Text: PDF (47 kB)

GaAs/Ge Heterostructure Photovoltaic Cells Fabricated by a Combination of MOCVD and Zinc Diffusion Techniques
V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova, and M. Z. Shvarts
pp. 355-359    Full Text: PDF (74 kB)

Internal Optical Loss in Semiconductor Lasers
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov
pp. 360-367    Full Text: PDF (98 kB)