Semiconductors -- April 2004

A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals
B. V. Petukhov
pp. 369-375    Full Text: PDF (84 kB)

Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb–Sn Inclusions
A. M. Orlov, A. A. Skvortsov, and A. A. Salanov
pp. 376-379    Full Text: PDF (61 kB)

Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds
N. L. Sermakasheva, G. F. Novikov, Yu. M. Shul'ga, and V. N. Semenov
pp. 380-386    Full Text: PDF (83 kB)

Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs
P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 387-392    Full Text: PDF (102 kB)

Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions
S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, N. Fernelius, and J. Goldstein
pp. 393-396    Full Text: PDF (65 kB)

Electron–Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum
V. I. Kadushkin
pp. 397-401    Full Text: PDF (73 kB)

Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics
V. N. Katerinchuk and Z. D. Kovalyuk
pp. 402-405    Full Text: PDF (65 kB)

Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 406-409    Full Text: PDF (63 kB)

Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)_N/(AlAs)_M Superlattices: The Effect of the Boundary Conditions
K. E. Glukhov, A. I. Bercha, D. V. Korbutyak, and V. G. Litovchenko
pp. 410-418    Full Text: PDF (113 kB)

Resonant Gamma–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures
Yu. N. Khanin, E. E. Vdovin, and Yu. V. Dubrovskii
pp. 419-430    Full Text: PDF (178 kB)

Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
I. A. Karpovich, B. N. Zvonkov, S. B. Levichev, N. V. Baidus, S. V. Tikhov, D. O. Filatov, A. P. Gorshkov, and S. Yu. Ermakov
pp. 431-436    Full Text: PDF (91 kB)

Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells
Yu. V. Khabarov, V. V. Kapaev, and V. A. Petrov
pp. 437-446    Full Text: PDF (121 kB)

A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdS_xSe_1–x Quantum Dots
V. P. Kunets, N. R. Kulish, M. P. Lisitsa, and V. P. Bryksa
pp. 447-450    Full Text: PDF (111 kB)

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices
P. N. Brunkov, S. O. Usov, Yu. G. Musikhin, A. E. Zhukov, G. E. Cirlin, V. M. Ustinov, S. G. Konnikov, and G. K. Rasulova
pp. 451-454    Full Text: PDF (84 kB)

Electrical Properties of Fine-Grained Polycrystalline CdTe
S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov
pp. 455-460    Full Text: PDF (74 kB)

Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon
A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, and O. M. Sreseli
pp. 461-467    Full Text: PDF (100 kB)

A Small-Molecule Organic Semiconductor
F. Yakuphanoglu, M. Aydin, N. Arsu, and M. Sekerci
pp. 468-471    Full Text: PDF (67 kB)

Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, V. I. Vasil'ev, V. N. Gavrin, E. P. Veretenkin, Yu. P. Kozlova, V. B. Kulikov, A. V. Markov, and A. Ya. Polyakov
pp. 472-479    Full Text: PDF (108 kB)

Investigation of Characteristics of InSb-Based Photodiode Linear Arrays
P. V. Biryulin, V. I. Turinov, and E. B. Yakimov
pp. 480-485    Full Text: PDF (197 kB)

Thermal Calculation of SiC p–i–n Diodes
P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov
pp. 486-493    Full Text: PDF (82 kB)