Semiconductors -- May 2004
Volume 38, Issue 5,
pp. 495-614
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Dependence of Dicarbon Annealing Temperature in n-Si on Oxygen Concentration in the Crystal
N. I. Boyarkina and S. A. Smagulova
pp. 495-498
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Equilibrium Characteristics and Low-Temperature Photoluminescence of CdTe:Pb Single Crystals
A. V. Savitsky, O. A. Parfenyuk, M. I. Ilashchuk, A. I. Savchuk, and S. N. Chupyra
pp. 499-504
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Electrical Properties of Layered FeGaInS4 Single Crystals
N. N. Niftiev
pp. 505-506
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Features of Thermal Radiation of Plane-Parallel Semiconductor Wafers
K. Yu. Guga, A. G. Kollyukh, A. I. Liptuga, V. A. Morozhenko, and V. I. Pipa
pp. 507-511
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Nonlinear Absorption of Light by Zn0.37Cd0.63Se Solid Solutions
A. Baidullaeva, A. I. Vlasenko, P. E. Mozol', and L. F. Shcherbonos
pp. 512-513
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Mobility of Minority Charge Carriers in p-HgCdTe Films
V. S. Varavin, S. A. Dvoretskii, V. Ya. Kostyuchenko, V. N. Ovsyuk, and D. Yu. Protasov
pp. 514-519
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Optical Properties of Synthetic Diamond Single Crystals
A. V. Mudryi, T. P. Larionova, I. A. Shakin, G. A. Gusakov, G. A. Dubrov, and V. V. Tikhonov
pp. 520-523
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Phase Conjugation on the Surface of Optically Excited ZnO
A. N. Gruzintsev and V. T. Volkov
pp. 524-527
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Paramagnetic Structural Defects and Conductivity in Hydrogenated Nanocrystalline Carbon-Doped Silicon Films
O. I. Shevaleevskii, A. A. Tsvetkov, L. L. Larina, S. Y. Myong, and K. S. Lim
pp. 528-530
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Electrical Properties of MnIn2Se4
N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, F. M. Mamedov, and M. B. Muradov
pp. 531-532
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PlasmonPhononPolaritons in p-Doped BiSb Alloys
N. P. Stepanov
pp. 533-536
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MOCVD Growth and Mg-Doping of InAs Layers
T. I. Voronina, T. S. Lagunova, S. S. Kizhayev, S. S. Molchanov, B. V. Pushnyi, and Yu. P. Yakovlev
pp. 537-542
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Coefficients of Capture of Free Excitons by Shallow Acceptors and Donors in Gallium Arsenide
K. D. Glinchuk, N. M. Litovchenko, and O. N. Strilchuk
pp. 543-545
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Variation in the Built-in Potential of a Photodiode Based on an n-InSep-GaSe Heterojunction in the Course of Aging
S. I. Drapak, V. B. Orletskii, and Z. D. Kovalyuk
pp. 546-549
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On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures
A. V. Sachenko, A. P. Gorban', and V. P. Kostylyov
pp. 550-553
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Theory of Tunneling Current in MetalSemiconductor Contacts with Subsurface Isotype delta-Doping
V. I. Shashkin and A. V. Murel
pp. 554-559
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LOW-DIMENSIONAL SYSTEMS
Geometric Structure and Spectral Characteristics of Electronic States in Silicon Nanoparticles
S. I. Kurganskii and N. A. Borsch
pp. 560-564
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Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures
V. F. Agekyan, Yu. A. Stepanov, I. Akai, T. Karasava, L. E. Vorob'ev, D. A. Firsov, A. E. Zhukov, V. M. Ustinov, A. Zeilmeyer, S. Shmidt, S. Hanna, and E. Zibik
pp. 565-571
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Properties of Self-Organized SiGe Nanostructures Formed by Ion Implantation
Yu. N. Parkhomenko, A. I. Belogorokhov, N. N. Gerasimenko, A. V. Irzhak, and M. G. Lisachenko
pp. 572-575
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Vertical Transport of Hot Electrons in GaAs/AlAs Superlattices
D. N. Mirlin, V. F. Sapega, and V. M. Ustinov
pp. 576-580
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Interaction of Infrared Radiation with Free Carriers in Mesoporous Silicon
L. A. Osminkina, E. V. Kurepina, A. V. Pavlikov, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 581-587
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Photoconductivity of Polymer Compositions with a High Content of Organic Dyes
N. A. Davidenko, A. A. Ishchenko, L. I. Kostenko, N. G. Kuvshinsky, D. D. Mysyk, and R. D. Mysyk
pp. 588-593
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Tensoresistive Effect in Porous Silicon Layers with Different Morphology
S. P. Zimin and A. N. Bragin
pp. 594-597
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ESR Studies of Nanocrystalline Silicon Films Obtained by Pulsed Laser Ablation of Silicon Targets
V. Ya. Bratus, S. M. Okulov, É. B. Kaganovich, I. M. Kizyak, and É. G. Manoilov
pp. 598-602
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Specific Features of Electrical Transport in Anisotropically Nanostructured Silicon
P. A. Forsh, L. A. Osminkina, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 603-606
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PHYSICS OF SEMICONDUCTOR DEVICES
Low-Threshold 1.3-µm Injection Lasers Based on Single InGaAsN Quantum Wells
V. A. Odnoblyudov, A. Yu. Egorov, M. M. Kulagina, N. A. Maleev, Yu. M. Shernyakov, E. V. Nikitina, and V. M. Ustinov
pp. 607-609
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Kinetics of Electroluminescence in an Efficient Silicon Light-Emitting Diode with Thermally Stable Spectral Characteristics
A. M. Emel'yanov, Yu. A. Nikolaev, N. A. Sobolev, and T. M. Mel'nikova
pp. 610-614
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