Semiconductors -- June 2004

Magnetic Properties of Carbon Structures
T. L. Makarova
pp. 615-638    Full Text: PDF (689 kB)

A Study of Recombination Centers in Irradiated p-Si Crystals
T. A. Pagava
pp. 639-643    Full Text: PDF (81 kB)

Long-Wavelength Edge of the Spectrum of Hot Electron–Hole Plasma Radiation in Photoexcited Indium Arsenide
E. Shatkovskis and A. Cesnys
pp. 644-647    Full Text: PDF (53 kB)

A Protrusion in the Absorption Spectra of GaAs Excited by High-Power Picosecond Light Pulses
G. S. Altybaev, I. L. Bronevoi, and S. E. Kumekov
pp. 648-651    Full Text: PDF (60 kB)

Photosensitive Polyimides Containing Substituted Diphenylmethane Fragments in the Backbone
E. L. Aleksandrova, G. I. Nosova, N. A. Solovskaya, K. A. Romashkova, V. A. Luk'yashina, E. V. Konozobko, and V. V. Kudryavtsev
pp. 652-656    Full Text: PDF (82 kB)

Analysis of Polarization Modulation Spectra of Photopleochroism Induced by Uniaxial Compression in Ge Crystals
I. E. Matyash and B. K. Serdega
pp. 657-662    Full Text: PDF (77 kB)

Physical Mechanisms of Laser Correction and Stabilization of the Parameters of Al–n–n⁺-Si–Al Schottky Barrier Structures
G. I. Vorobets, M. M. Vorobets, V. N. Strebezhev, E. V. Buzaneva, and A. G. Shkavro
pp. 663-665    Full Text: PDF (84 kB)

Slow Relaxation of Conductance of Quasi-Two-Dimensional Highly Disordered MIS Structures
A. B. Davydov and B. A. Aronzon
pp. 666-671    Full Text: PDF (88 kB)

Fabrication and Properties of an n-ZnO:Ga/p-GaN:Mg/alpha-Al₂O₃ Heterojunction
B. M. Ataev, Ya. I. Alivov, V. V. Mamedov, S. Sh. Makhmudov, and B. A. Magomedov
pp. 672-674    Full Text: PDF (53 kB)

High-Frequency Barrier Capacitance of Metal–Semiconductor Contacts and Abrupt p–n Junctions
V. I. Murygin
pp. 675-677    Full Text: PDF (35 kB)

Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition
W. V. Lundin, A. V. Sakharov, A. F. Tsatsul'nikov, E. E. Zavarin, A. I. Besyul'kin, A. V. Fomin, and D. S. Sizov
pp. 678-682    Full Text: PDF (58 kB)

Structural Defects at the Semiconductor–Ferroelectric Interface
L. S. Berman and I. E. Titkov
pp. 683-688    Full Text: PDF (78 kB)

Electron–Electron Scattering in Stepped Quantum Wells
V. L. Zerova, L. E. Vorob'ev, and G. G. Zegrya
pp. 689-695    Full Text: PDF (94 kB)

Spectroscopy of Exciton States of InAs Quantum Molecules
V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, B. V. Novikov, G. É. Cirlin, Yu. B. Samsonenko, A. A. Tonkikh, V. A. Egorov, N. K. Polyakov, and V. M. Ustinov
pp. 696-701    Full Text: PDF (152 kB)

Role of Si-Doped Al_0.3Ga_0.7As Layers in the High-Frequency Conductivity of GaAs/Al_0.3Ga_0.7As Heterostructures under Conditions of the Quantum Hall Effect
I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, Yu. M. Gal'perin, V. V. Preobrazhenskii, and A. I. Toropov
pp. 702-711    Full Text: PDF (156 kB)

Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 712-716    Full Text: PDF (142 kB)

Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs
E. A. Grebenshchikova, A. N. Imenkov, B. E. Zhurtanov, T. N. Danilova, M. A. Sipovskaya, N. V. Blasenko, and Yu. P. Yakovlev
pp. 717-723    Full Text: PDF (196 kB)

Soft Breakdown as a Cause of Current Drop in an MOS Tunnel Structure
A. F. Shulekin, S. É. Tyaginov, R. Khlil, A. El Hdiy, and M. I. Vexler
pp. 724-726    Full Text: PDF (54 kB)

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
L. Ya. Karachinsky, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, A. R. Kovsh, J. S. Wang, R. S. Hsiao, J. Y. Chi, V. M. Ustinov, and N. N. Ledentsov
pp. 727-731    Full Text: PDF (70 kB)

High-Power 1.5 µm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates
M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov
pp. 732-735    Full Text: PDF (108 kB)