Semiconductors -- July 2004

Interphase Interactions and Features of Structural Relaxation in TiB_x–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment
N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudrik, O. S. Litvin, P. M. Litvin, and V. V. Milenin
pp. 737-741    Full Text: PDF (392 kB)

Local Symmetry of the Pb_1 – xSn_xSe Lattice near the Zero-Gap State
E. S. Khuzhakulov
pp. 742-744    Full Text: PDF (54 kB)

Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons
V. V. Kozlovskii, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, and T. P. Samsonova
pp. 745-750    Full Text: PDF (75 kB)

Study of the Electrical Properties of Cd_xHg_1 – xTe
P. V. Biryulin, V. I. Kosheleva, and V. I. Turinov
pp. 751-757    Full Text: PDF (98 kB)

Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C
E. P. Neustroev, S. A. Smagulova, I. V. Antonova, and L. N. Safronov
pp. 758-762    Full Text: PDF (64 kB)

The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr₂Se₄
A. A. Abdullaev
pp. 763-768    Full Text: PDF (78 kB)

Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons
V. N. Brudnyi, V. M. Boiko, I. V. Kamenskaya, and N. G. Kolin
pp. 769-774    Full Text: PDF (97 kB)

Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon
D. I. Tetelbaum, E. I. Zorin^[dagger], and N. V. Lisenkova
pp. 775-777    Full Text: PDF (35 kB)

Specific Thermoelectric Properties of Lightly Doped Bi₂(TeSe)₃ Solid Solutions
P. P. Konstantinov, L. V. Prokof'eva, Yu. I. Ravich, M. I. Fedorov, and V. V. Kompaniets
pp. 778-781    Full Text: PDF (63 kB)

Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 782-787    Full Text: PDF (83 kB)

Localization of a Longitudinal Autosoliton in InSb
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 788-790    Full Text: PDF (68 kB)

Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV
A. A. Gutkin and M. A. Reshchikov
pp. 791-795    Full Text: PDF (67 kB)

Hysteresis in Ag₂Te near and within the Phase Transition Region
S. A. Aliev
pp. 796-799    Full Text: PDF (60 kB)

Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation
A. V. Murel', S. V. Obolenskii, A. G. Fefelov, and E. V. Kiseleva
pp. 800-806    Full Text: PDF (83 kB)

Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons
N. B. Strokan, A. M. Ivanov, N. S. Savkina, A. A. Lebedev, V. V. Kozlovskii, M. Syvajarvi, and R. Yakimova
pp. 807-811    Full Text: PDF (77 kB)

Nonlinear Properties of Phototropic Media on the Basis of Cu_xSe Nanoparticles in Quartz Glass
S. A. Zolotovskaya, N. N. Posnov, P. V. Prokosin, K. V. Yumashev, V. S. Gurin, and A. A. Alexeenko
pp. 812-817    Full Text: PDF (90 kB)

Radiative Recombination in Ge⁺-Implanted SiO₂ Films Annealed under Hydrostatic Pressure
I. E. Tyschenko and L. Rebohle
pp. 818-823    Full Text: PDF (91 kB)

The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/Al_xGa_1 – xAs Superlattices
S. I. Borisenko
pp. 824-829    Full Text: PDF (75 kB)

Kapitsa Effect in Crystals with Superlattices
P. V. Gorskii
pp. 830-832    Full Text: PDF (39 kB)

Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an In_xGa_1 – xAs Matrix on a GaAs Substrate
N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin, A. E. Zhukov, M. V. Maksimov, N. D. Zakharov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. Werner, F. Guffart, and D. Bimberg
pp. 833-836    Full Text: PDF (182 kB)

Mechanism of Dicke Superradiance in Semiconductor Heterostructures
L. Ya. Karachinsky, I. I. Novikov, N. Yu. Gordeev, and G. G. Zegrya
pp. 837-841    Full Text: PDF (66 kB)

Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures
A. V. Sachenko, Yu. V. Kryuchenko, I. O. Sokolovskii, and O. M. Sreseli
pp. 842-848    Full Text: PDF (93 kB)

Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix
V. M. Masalov, É. N. Samarov, G. I. Volkodav^[dagger], G. A. Emel'chenko, A. V. Bazhenov, S. I. Bozhko, I. A. Karpov, A. N. Gruzintsev, and E. E. Yakimov
pp. 849-854    Full Text: PDF (98 kB)

Leakage Currents over the Surface of CdHgTe-Based Photodiodes
P. V. Biryulin, V. I. Turinov, and E. B. Yakimov
pp. 855-861    Full Text: PDF (162 kB)