Semiconductors -- October 2004

Photosensitive Polymer Semiconductors
E. L. Aleksandrova
pp. 1115-1159    Full Text: PDF (557 kB)

Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis
A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, and D. B. Chesnokova
pp. 1160-1163    Full Text: PDF (53 kB)

Electronic and Structural Transitions in Pb_1 – xGe_xTe:Ga Alloys under Pressure
E. P. Skipetrov, E. A. Zvereva, O. S. Volkova, A. V. Golubev, A. Yu. Mollaev, R. K. Arslanov, and V. E. Slyn'ko
pp. 1164-1167    Full Text: PDF (57 kB)

Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown Cd_XHg_1 – XTe Layers
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, and Yu. G. Sidorov
pp. 1168-1171    Full Text: PDF (61 kB)

Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe
P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina, and Yu. G. Sidorov
pp. 1172-1175    Full Text: PDF (56 kB)

Formation and Study of Buried SiC Layers with a High Content of Radiation Defects
E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, and A. A. Lebedev
pp. 1176-1178    Full Text: PDF (85 kB)

A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions
A. I. Titov, P. A. Karasev, and S. O. Kucheyev
pp. 1179-1186    Full Text: PDF (98 kB)

Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions
E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strel'chuk, A. O. Konstantinov, A. Hallén, A. Yu. Nikiforov, V. A. Skuratov, and K. Havancsak
pp. 1187-1191    Full Text: PDF (92 kB)

Fabrication and Photosensitivity of Heterojunctions Based on CuIn₃Se₅ Crystals
I. V. Bodnar', S. E. Nikitin, G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev
pp. 1192-1197    Full Text: PDF (107 kB)

Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al–p-Si–SnO₂:Cu–Ag Heterostructures
S. V. Slobodchikov^[dagger], E. V. Russu, É. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov
pp. 1198-1201    Full Text: PDF (61 kB)

Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100)
A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, and P. Werner
pp. 1202-1206    Full Text: PDF (387 kB)

Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures
M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, A. E. Zhukov, V. M. Ustinov, N. A. Cherkashin, N. A. Bert, N. N. Ledentsov, and D. Bimberg
pp. 1207-1211    Full Text: PDF (98 kB)

Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 1212-1216    Full Text: PDF (61 kB)

Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique
A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov
pp. 1217-1220    Full Text: PDF (430 kB)

Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon
A. G. Kazanskii and K. Yu. Khabarova
pp. 1221-1224    Full Text: PDF (60 kB)

Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines
A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul'yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, and K. S. Zhuravlev
pp. 1225-1229    Full Text: PDF (72 kB)

Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor–Air Interface
N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and V. V. Shustov
pp. 1230-1234    Full Text: PDF (101 kB)

Microwave Field-Effect Transistors Based on Group-III Nitrides
S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel'skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, Yu. A. Matveev, and A. A. Chernyavskii
pp. 1235-1239    Full Text: PDF (60 kB)