Semiconductors -- April 2005
Volume 39, Issue 4,
pp. 377-484
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Optical Absorption and Chromium Diffusion in ZnSe Single Crystals
Yu. F. Vaksman, V. V. Pavlov, Yu. A. Nitsuk, Yu. N. Purtov, A. S. Nasibov, and P. V. Shapkin
pp. 377-380
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Raman Spectra of the Laser-Irradiated GaSe Single Crystals
A. Baidullaeva, Z. K. Vlasenko, B. K. Dauletmuratov, L. F. Kuzan, and P. E. Mozol'
pp. 381-384
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The Electrical and Optical Properties of InAs Irradiated with Electrons (~2 MeV): The Energy Structure of Intrinsic Point Defects
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin
pp. 385-394
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The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide
A. B. Filonov, A. E. Krivosheev, L. I. Ivanenko, G. Behr, J. Schumann, D. Souptel, and V. E. Borisenko
pp. 395-399
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The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals
T. A. Pagava
pp. 400-401
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures
I. V. Bodnar', E. S. Dmitrieva, S. E. Nikitin, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 402-405
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Edge Photoluminescence of Single-Crystal Silicon at Room Temperature
E. G. Gule, E. B. Kaganovich, I. M. Kizyak, E. G. Manoilov, and S. V. Svechnikov
pp. 406-408
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Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures
G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 409-411
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LOW-DIMENSIONAL SYSTEMS
Effects of Spatial Reproduction as a Result of the Interference of Electron Waves in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells
V. A. Petrov and A. V. Nikitin
pp. 412-420
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Effective Mass Anisotropy of Gamma Electrons in a GaAs/(AlGa)As Quantum Well
E. E. Vdovin and Yu. N. Khanin
pp. 421-428
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A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields
V. A. Gergel', Yu. V. Gulyaev, V. A. Kurbatov, and M. N. Yakupov
pp. 429-431
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The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices
I. I. Reshina, S. V. Ivanov, D. N. Mirlin, I. V. Sedova, and S. V. Sorokin
pp. 432-438
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Resonance Donor States in Quantum Wells
N. A. Bekin
pp. 439-447
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Special Features of the Electrical Conductivity in Doped alpha-Si:H Films with Silicon Nanocrystals
S. A. Arzhannikova, M. D. Efremov, G. N. Kamaev, A. V. Vishnyakov, and V. A. Volodin
pp. 448-454
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An Electron Spin Resonance Study of CopperCarbon Systems
B. P. Popov
pp. 455-457
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Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers and Paramagnetic Centers in Porous Silicon Layers
L. A. Osminkina, A. S. Vorontsov, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 458-461
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PHYSICS OF SEMICONDUCTOR DEVICES
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers
N. A. Maleev, A. G. Kuz'menkov, A. E. Zhukov, A. P. Vasil'ev, A. S. Shulenkov, S. V. Chumak, E. V. Nikitina, S. A. Blokhin, M. M. Kulagina, E. S. Semenova, D. A. Livshits, M. V. Maksimov, and V. M. Ustinov
pp. 462-466
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A Study of Carrier Statistics in InGaN/GaN LED Structures
D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul'nikov, and N. N. Ledentsov
pp. 467-471
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Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from MetalOrganic Compounds
A. P. Astakhova, N. D. Il'inskaya, A. N. Imenkov, S. S. Kizhaev, S. S. Molchanov, and Yu. P. Yakovlev
pp. 472-476
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Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers
I. I. Novikov, N. Yu. Gordeev, L. Ya. Karachinskii, M. V. Maksimov, Yu. M. Shernyakov, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, S. S. Mikhrin, and N. N. Ledentsov
pp. 477-480
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Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3 µm InAs/GaAs QD Lasers
I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, V. M. Ustinov, and G. G. Zegrya
pp. 481-484
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