Semiconductors -- May 2005

The Effect of Oxygen on the ZnS Electronic Energy-Band Structure
N. K. Morozova, I. A. Karetnikov, K. V. Golub, N. D. Danilevich, V. M. Lisitsyn, and V. I. Oleshko
pp. 485-492    Full Text: PDF (113 kB)

Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals
B. P. Popov, V. K. Sobolevskii, E. G. Apushkinskii, and V. P. Savel'ev
pp. 493-498    Full Text: PDF (91 kB)

The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons
V. N. Brudnyi, N. G. Kolin, D. I. Merkurisov, and V. A. Novikov
pp. 499-505    Full Text: PDF (100 kB)

The Conductivity and Hall Effect in CdF₂:In and CdF₂:Y
I. I. Saidashev, E. Yu. Perlin, A. I. Ryskin, and A. S. Shcheulin
pp. 506-513    Full Text: PDF (107 kB)

The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method
V. E. Kaminskii
pp. 514-520    Full Text: PDF (85 kB)

The Extrinsic Photoconductivity of Chalcogens in Ge_1 – xSi_x Solid Solutions
N. B. Radchuk and A. Yu. Ushakov
pp. 521-522    Full Text: PDF (29 kB)

Specific Features of Epitaxial-Film Formation on Porous III–V Substrates
A. A. Sitnikova, A. V. Bobyl, S. G. Konnikov, and V. P. Ulin
pp. 523-527    Full Text: PDF (265 kB)

p⁺-Si–n-CdF₂ Heterojunctions
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin, and A. S. Shcheulin
pp. 528-532    Full Text: PDF (577 kB)

Injection Currents in Narrow-Gap (Pb_1 – xSn_xTe):In Insulators
A. N. Akimov, V. G. Erkov, A. E. Klimov, E. L. Molodtsova, S. P. Suprun, and V. N. Shumsky
pp. 533-538    Full Text: PDF (83 kB)

The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction
L. A. Kosyachenko, X. Mathew, V. V. Motushchuk, and V. M. Sclyarchuk
pp. 539-542    Full Text: PDF (63 kB)

The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well
E. N. Morozova, O. N. Makarovskii, V. A. Volkov, Yu. V. Dubrovskii^[dagger], L. Turyanska, E. E. Vdovin, A. Patané, L. Eaves, and M. Henini
pp. 543-546    Full Text: PDF (65 kB)

Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb
G. E. Cirlin, V. G. Dubrovskii, A. A. Tonkikh, N. V. Sibirev, V. M. Ustinov, and P. Werner
pp. 547-551    Full Text: PDF (275 kB)

The Formation of Silicon Nanocrystals in SiO₂ Layers by the Implantation of Si Ions with Intermediate Heat Treatments
G. A. Kachurin, V. A. Volodin, D. I. Tetel'baum, D. V. Marin, A. F. Leier, A. K. Gutakovskii, A. G. Cherkov, and A. N. Mikhailov
pp. 552-556    Full Text: PDF (236 kB)

The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy
G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh, and V. M. Ustinov
pp. 557-564    Full Text: PDF (319 kB)

The Electronic and Emissive Properties of Au-Doped Porous Silicon
V. E. Primachenko, Ja. F. Kononets, B. M. Bulakh, E. F. Venger, É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manoilov, and Yu. A. Tsyrkunov
pp. 565-571    Full Text: PDF (90 kB)

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films
A. V. Vasin, A. V. Rusavsky, V. S. Lysenko, A. N. Nazarov, V. I. Kushnirenko, S. P. Starik, and V. G. Stepanov
pp. 572-576    Full Text: PDF (78 kB)

Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes
I. V. Rozhanskii and D. A. Zakheim
pp. 577-584    Full Text: PDF (193 kB)

Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films
E. A. Konshina and A. I. Vangonen
pp. 585-590    Full Text: PDF (73 kB)

Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during the Field Ionization of Insulator Atoms
I. S. Savinov
pp. 591-593    Full Text: PDF (50 kB)

Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, and Yu. G. Shreter
pp. 594-599    Full Text: PDF (96 kB)

Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact
S. I. Drapak, M. O. Vorobets, and Z. D. Kovalyuk
pp. 600-602    Full Text: PDF (46 kB)

The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers
G. G. Zegrya and I. Yu. Solov'ev
pp. 603-607    Full Text: PDF (64 kB)