Semiconductors -- June 2005
Volume 39, Issue 6,
pp. 609-733
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Kinetics of Defect Formation in ZnO Subjected to a Flux of Oxygen Radicals
M. B. Kotlyarevsky, I. V. Rogozin, and A. V. Marakhovskii
pp. 609-614
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Specific Features of the Segregation-Related Redistribution of Phosphorus during Thermal Oxidation of Heavily Doped Silicon Layers
O. V. Aleksandrov and N. N. Afonin
pp. 615-622
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Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys
V. G. Deibuk and A. V. Voznyi
pp. 623-628
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Determination of the Concentration of Deep Levels in Semi-insulating CdS Single Crystals by Photoinduced-Current Transient Spectroscopy
A. P. Odrinskii
pp. 629-635
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Determination of the Charge Carrier Concentration in Lead Selenide Polycrystalline Layers Using Reflectance Spectra
A. E. Gamarts, Yu. M. Kanageeva, and V. A. Moshnikov
pp. 636-637
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Energy Parameters of Two-Electron Tin Centers in PbSe
S. A. Nemov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, and É. S. Khuzhakulov
pp. 638-641
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Dynamic Chaos in a Partially Illuminated Compensated Semiconductor Under the Conditions of Impurity-Related Breakdown
K. M. Jandieri, Z. S. Kachlishvili, and A. B. Stroganov
pp. 642-649
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Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, T. A. Nalet, and S. V. Stegantsov
pp. 650-657
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Recombination Mechanism of the Piezophotoresistive Effect in Compensated Semiconductors
B. M. Pavlyshenko and R. Ya. Shuvar
pp. 658-660
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Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K
A. N. Georgobiani, A. N. Gruzintsev, E. E. Yakimov, C. Barthou, and P. Benalloul
pp. 661-665
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator
A. G. Zhdan, E. I. Goldman, Yu. V. Gulyaev, and G. V. Chucheva
pp. 666-673
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Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures
T. V. Blank, Yu. A. Goldberg, E. E. Zavarin, O. V. Konstantinov, and N. M. Shmidt
pp. 674-678
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LOW-DIMENSIONAL SYSTEMS
The Effect of Adsorbed Molecules on the Charge-Carrier Spectrum in a Semiconductor Nanowire
V. A. Lykakh and E. S. Syrkin
pp. 679-684
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Local Tunneling Spectroscopy of Silicon Nanostructures
N. T. Bagraev, A. D. Bouravlev, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, Yu. I. Romanov, and S. A. Rykov
pp. 685-696
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Room-Temperature Electroreflectance and Reflectance of a GaAs/AlGaAs Single Quantum Well Structure
A. A. Herasimovich, S. V. Shokhovets, G. Gobsch, and D. S. Domanevskii
pp. 697-702
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The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55 µm
N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsul'nikov, A. R. Kovsh, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg
pp. 703-708
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition
O. I. Shevaleevskiy, S. Y. Myong, K. S. Lim, S. Miyajima, and M. Konagai
pp. 709-711
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PHYSICS OF SEMICONDUCTOR DEVICES
The Physical Properties of CdTe Doped with V and Ge
S. Yu. Paranchych, L. D. Paranchych, V. N. Makogonenko, Yu. V. Tanasyuk, M. D. Andriichuk, and V. R. Romanyuk
pp. 712-715
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A New Memory Element Based on Silicon Nanoclusters in a ZrO2 Insulator with a High Permittivity for Electrically Erasable Read-Only Memory
V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, Yu. N. Novikov, A. L. Aseev, J. H. Lee, J.-W. Lee, and C. W. Kim
pp. 716-721
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Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe
L. A. Kosyachenko, O. L. Maslyanchuk, and V. M. Sklyarchuk
pp. 722-729
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A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD
E. V. Bogdanova, A. A. Volkova, A. E. Cherenkov, A. A. Lebedev, R. D. Kakanakov, L. P. Kolaklieva, G. A. Sarov, T. M. Cholakova, A. V. Kirillov, and L. P. Romanov
pp. 730-733
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