Semiconductors -- September 2005

Formation of Nanostructures in a Ga₂Se₃/GaAs System
N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, and A. A. Starodubtsev
pp. 989-992    Full Text: PDF (175 kB)

Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques
V. V. Ushakov and Yu. V. Klevkov
pp. 993-997    Full Text: PDF (145 kB)

Exact Self-Compensation of Conduction in Cd_0.95Zn_0.05Te:Cl Crystals in a Wide Range of Cd Vapor Pressures
O. A. Matveev, A. I. Terent'ev, N. K. Zelenina, V. N. Gus'kov, V. E. Sedov, A. A. Tomasov, and V. P. Karpenko
pp. 998-1003    Full Text: PDF (76 kB)

Optical Properties of ZnGeP₂ in the UV Spectral Region
Yu. M. Basalaev, A. B. Gordienko, and A. S. Poplavnoi
pp. 1004-1006    Full Text: PDF (48 kB)

Instability of Drift Waves in Two-Component Solid-State Plasma
A. A. Bulgakov and O. V. Shramkova
pp. 1007-1012    Full Text: PDF (103 kB)

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters
P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 1013-1016    Full Text: PDF (59 kB)

Study of the Properties of Hg_{1 – x – y – z}Cd_xMn_yZn_zTe as a New Infrared Optoelectronic Material
I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, and S. Yu. Karelin
pp. 1017-1022    Full Text: PDF (140 kB)

Transport Coefficients of n-Bi₂Te_2.7Se_0.3 in a Two-Band Model of the Electron Spectrum
P. P. Konstantinov, L. V. Prokof'eva, M. I. Fedorov, D. A. Pshenai-Severin, Yu. I. Ravich, V. V. Kompaniets, and V. A. Chistyakov
pp. 1023-1027    Full Text: PDF (68 kB)

The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser
A. Baidullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, and P. E. Mozol'
pp. 1028-1031    Full Text: PDF (365 kB)

Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate
S. Yu. Davydov and A. V. Pavlyk
pp. 1032-1034    Full Text: PDF (33 kB)

Photoelectric Properties of Surface-Barrier Structures Based on Zn_2 – 2xCu_xIn_xSe₂ Films Obtained by Selenization
V. Yu. Rud', Yu. V. Rud', V. F. Gremenok, E. P. Zaretskaya, and O. N. Sergeeva
pp. 1035-1039    Full Text: PDF (147 kB)

Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures
V. A. Gergel', Yu. V. Gulyaev, and M. N. Yakupov
pp. 1040-1044    Full Text: PDF (71 kB)

Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers
A. M. Emel'yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, and E. O. Parshin
pp. 1045-1047    Full Text: PDF (47 kB)

A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor
S. A. Ignatenko and V. E. Borisenko
pp. 1048-1052    Full Text: PDF (67 kB)

The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, and A. A. Tonkikh
pp. 1053-1057    Full Text: PDF (61 kB)

Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes
V. V. Ivanovskaya, G. Seifert, and A. L. Ivanovskii
pp. 1058-1065    Full Text: PDF (656 kB)

Exciton States in Semiconductor Spherical Nanostructures
S. I. Pokutnyi
pp. 1066-1070    Full Text: PDF (64 kB)

High-Frequency Nonlinear Response of Double-Well Nanostructures
V. F. Elesin and I. Yu. Kateev
pp. 1071-1075    Full Text: PDF (74 kB)

Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots
A. Yu. Maslov and O. V. Proshina
pp. 1076-1081    Full Text: PDF (66 kB)

A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure
D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, and G. N. Goltsman
pp. 1082-1086    Full Text: PDF (131 kB)

Semiconductor WGM Lasers for the Mid-IR Spectral Range
V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, and G. Hill
pp. 1087-1092    Full Text: PDF (139 kB)

Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum
N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov
pp. 1093-1095    Full Text: PDF (42 kB)

A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density
A. V. Sachenko and Yu. V. Kryuchenko
pp. 1096-1101    Full Text: PDF (76 kB)

A Combined Model of a Resonant-Tunneling Diode
I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva
pp. 1102-1109    Full Text: PDF (97 kB)