Semiconductors -- October 2005

Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys
V. G. Deibuk, S. G. Dremlyuzhenko, and S. É. Ostapov
pp. 1111-1116    Full Text: PDF (77 kB)

Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge_1 – xSi_x
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 1117-1121    Full Text: PDF (65 kB)

Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra
L. I. Berezhinskii, E. F. Venger, I. E. Matyash, A. V. Sachenko, and B. K. Serdega
pp. 1122-1127    Full Text: PDF (85 kB)

Mechanism of Radiative Recombination in the Region of Interband Transitions in Si–Ge Solid Solutions
A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova, and N. V. Abrosimov
pp. 1128-1130    Full Text: PDF (43 kB)

Magnetism of III–V Crystals Doped with Rare-Earth Elements
N. T. Bagraev and V. V. Romanov
pp. 1131-1140    Full Text: PDF (116 kB)

Study of Certain Properties of Si–Si_1 – xGe_x (0 <= x <= 1) Structures Grown from a Restricted Tin-Based Solution–Melt by Liquid-Phase Epitaxy
B. Sapaev and A. S. Saidov
pp. 1141-1146    Full Text: PDF (287 kB)

Formation of Potential Barriers in Undoped Disordered Semiconductors
N. V. Vishnyakov, S. P. Vikhrov, V. G. Mishustin, A. P. Avachev, I. G. Utochkin, and A. A. Popov
pp. 1147-1152    Full Text: PDF (83 kB)

Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures
I. V. Antonova
pp. 1153-1157    Full Text: PDF (68 kB)

Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation
A. N. Gruzintsev, A. N. Red'kin, and C. Barthou
pp. 1158-1161    Full Text: PDF (61 kB)

Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions
E. E. Vdovin and Yu. N. Khanin
pp. 1162-1167    Full Text: PDF (84 kB)

Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO₂ Films
E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov, A. K. Gutakovskii, V. A. Shvets, A. G. Borisov, and M. D. Efremov
pp. 1168-1175    Full Text: PDF (229 kB)

Electronic Structure and Spectral Properties of Si₄₆ and Na₈Si₄₆ Clathrates
S. I. Kurganskii, N. A. Borshch, and N. S. Pereslavtseva
pp. 1176-1181    Full Text: PDF (113 kB)

Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure
G. F. Glinskii, A. V. Andrianov, O. M. Sreseli, and N. N. Zinov'ev
pp. 1182-1187    Full Text: PDF (88 kB)

Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers
N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg
pp. 1188-1193    Full Text: PDF (100 kB)

Study of the Properties of a Two-Dimensional Electron Gas in p^–-3C-SiC/n⁺-6H-SiC Heterostructures at Low Temperatures
A. A. Lebedev, D. K. Nel'son, B. S. Razbirin, I. I. Saidashev, A. N. Kuznetsov, and A. E. Cherenkov
pp. 1194-1196    Full Text: PDF (49 kB)

Kinetics of Structural and Phase Transformations in Thin SiO_x Films in the Course of a Rapid Thermal Annealing
V. A. Dan'ko, I. Z. Indutnyi, V. S. Lysenko, I. Yu. Maidanchuk, V. I. Min'ko, A. N. Nazarov, A. S. Tkachenko, and P. E. Shepelyavyi
pp. 1197-1203    Full Text: PDF (137 kB)

A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory
V. A. Gergel' and M. N. Yakupov
pp. 1204-1209    Full Text: PDF (80 kB)

Temperature Dependence of the Threshold Current of QW Lasers
N. L. Bazhenov, K. D. Mynbaev, V. I. Ivanov-Omskii, V. A. Smirnov, V. P. Evtikhiev, N. A. Pikhtin, M. G. Rastegaeva, A. L. Stankevich, I. S. Tarasov, A. S. Shkol'nik, and G. G. Zegrya
pp. 1210-1214    Full Text: PDF (66 kB)

Mid- and Far-IR Focal Plane Arrays Based on Hg_1 – xCd_xTe Photodiodes
V. I. Stafeev, K. O. Boltar', I. D. Burlakov, V. M. Akimov, E. A. Klimanov, L. D. Saginov, V. N. Solyakov, N. G. Mansvetov, V. P. Ponomarenko, A. A. Timofeev, and A. M. Filachev
pp. 1215-1223    Full Text: PDF (394 kB)

Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures
G. S. Khrypunov
pp. 1224-1228    Full Text: PDF (56 kB)

Electroluminescent Properties of Strained p-Si LEDs
N. A. Sobolev, A. M. Emel'yanov, E. I. Shek, O. V. Feklisova, and E. B. Yakimov
pp. 1229-1232    Full Text: PDF (61 kB)

Erratum: "Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol" [Semiconductors 39, 884 (2005)]
V. E. Ogluzdin
p. 1233    Full Text: PDF (6 kB)