Semiconductors -- November 2005
Volume 39, Issue 11,
pp. 1235-1360
REVIEW
Light-Emitting Diodes Based on GaSb Alloys for the 1.64.4 µm Mid-Infrared Spectral Range
T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov, and Yu. P. Yakovlev
pp. 1235-1266
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ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation
V. G. Dubrovskii and G. E. Cirlin
pp. 1267-1274
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Hydrogen Desorption from the Surface under the Conditions of Epitaxial Growth of Silicon Layers from Monosilane in Vacuum
L. K. Orlov and T. N. Smyslova
pp. 1275-1279
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Adsorption, Desorption, and Contact and Thermal Transformation of C60 Molecules on a Ta(100) Surface
N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode[dagger]
pp. 1280-1284
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Applicability of a Simplified ShockleyReadHall Model to Semiconductors with Various Types of Defects
A. N. Yashin
pp. 1285-1289
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Sensitivity of InsulatorSemiconductor Structures to Time-Dependent Light Fluxes
N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov
pp. 1290-1293
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Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and T. N. Ushakova
pp. 1294-1298
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Dynamics of Laser-Induced Phase Transitions in Cadmium Telluride
A. A. Kovalev, S. P. Zhvavyi, and G. L. Zykov
pp. 1299-1303
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LOW-DIMENSIONAL SYSTEMS
Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy
D. S. Sizov, V. S. Sizov, V. V. Lundin, A. F. Tsatsul'nikov, E. E. Zavarin, and N. N. Ledentsov
pp. 1304-1307
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Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels
V. A. Kulbachinskii, V. A. Rogozin, R. A. Lunin, A. A. Belov, A. L. Karuzskii, A. V. Perestoronin, and A. V. Zdoroveishchev
pp. 1308-1312
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Interband Light Absorption in Size-Confined Systems in Uniform Electric Fields
É. P. Sinyavski, S. M. Sokovnich, and R. A. Khamidullin
pp. 1313-1318
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Photoluminescence of Silicon Nanocrystals under the Effect of an Electric Field
E. N. Vandyshev, A. M. Gilinskii, T. S. Shamirzaev, and K. S. Zhuravlev
pp. 1319-1322
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Circular Polarization of Luminescence Caused by the Current in Quantum Wells
N. S. Averkiev and A. Yu. Silov
pp. 1323-1327
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
OpalZnO Nanocomposites: Structure and Emission Properties
G. A. Emel'chenko, A. N. Gruzintsev, M. N. Koval'chuk, V. M. Masalov, É. N. Samarov, E. E. Yakimov, C. Barthou, and I. I. Zver'kova
pp. 1328-1332
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Luminescence and Electrical Conductivity of Polyamide Acid and Its MetalPolymer Complexes with La and Tb
É. A. Lebedev, M. Ya. Goikhman, D. M. Zhigunov, I. V. Podeshvo, V. V. Kudryavtsev, and V. Yu. Timoshenko
pp. 1333-1337
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Effect of the Initial Doping Level on Changes in the Free-Carrier Concentration in Porous Silicon during Ammonia Adsorption
A. V. Pavlikov, L. A. Osminkina, I. A. Belogorokhov, E. A. Konstantinova, A. I. Efimova, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 1338-1341
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PHYSICS OF SEMICONDUCTOR DEVICES
Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow
E. V. Anishchenko, V. A. Kagadei, E. V. Nefedtsev, D. I. Proskurovskii, and S. V. Romanenko
pp. 1342-1345
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A New Type of High-Efficiency Bifacial Silicon Solar Cell with External Busbars and a Current-Collecting Wire Grid
G. G. Untila, T. N. Kost, A. B. Chebotareva, M. B. Zaks, A. M. Sitnikov, and O. I. Solodukha
pp. 1346-1351
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Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth
Á. Nemcsics
pp. 1352-1355
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Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiOx:H
A. V. Medvedev, N. A. Feoktistov, A. B. Pevtsov, and V. G. Golubev
pp. 1356-1360
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