Semiconductors -- December 2005

Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts
B. S. Sokolovskii, V. I. Ivanov-Omskii, and G. A. Il'chuk
pp. 1361-1368    Full Text: PDF (99 kB)

Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe
E. I. Terukov and É. S. Khuzhakulov
pp. 1369-1370    Full Text: PDF (36 kB)

Electron Exchange between Neutral and Ionized Germanium Centers in PbSe
E. I. Terukov and É. S. Khuzhakulov
pp. 1371-1373    Full Text: PDF (38 kB)

Characterization of Photonic Crystals Based on Opal–Semiconductor Composites by Bragg Reflection Spectroscopy
G. M. Gadzhiev, V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel'kin, and V. V. Travnikov
pp. 1374-1380    Full Text: PDF (89 kB)

On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure
M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 1381-1386    Full Text: PDF (96 kB)

Simulation of the Capacitance–Voltage Characteristics of a Ferroelectric Material
L. S. Berman
pp. 1387-1390    Full Text: PDF (49 kB)

Estimation of the Energy Characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC Heterojunctions
S. Yu. Davydov, A. A. Lebedev, and O. V. Posrednik
pp. 1391-1393    Full Text: PDF (48 kB)

Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova
pp. 1394-1398    Full Text: PDF (68 kB)

Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy
D. I. Kryzhkov, N. A. Sobolev, B. A. Andreev, D. V. Denisov, Z. F. Krasil'nik, and E. I. Shek
pp. 1399-1402    Full Text: PDF (53 kB)

Electrical Properties of n-GaN/p-SiC Heterojunctions
O. Yu. Ledyaev, A. M. Strel'chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, and A. A. Lebedev
pp. 1403-1405    Full Text: PDF (51 kB)

Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se₂ Heterostructures and Exposed to gamma-ray Radiation
V. V. Emtsev, Yu. A. Nikolaev, D. S. Poloskin, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and M. V. Yakushev
pp. 1406-1409    Full Text: PDF (78 kB)

The Tail of Localized States in the Band Gap of the Quantum Well in the In_0.2Ga_0.8N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum
M. A. Jacobson, D. K. Nelson, O. V. Konstantinov, and A. V. Matveentsev
pp. 1410-1414    Full Text: PDF (69 kB)

Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-µm Spectral Region
L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg
pp. 1415-1419    Full Text: PDF (72 kB)

The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova
pp. 1420-1425    Full Text: PDF (72 kB)

"Ideal" Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes with Guard Ring Termination
P. A. Ivanov, I. V. Grekhov, N. D. Il'inskaya, and T. P. Samsonova
pp. 1426-1428    Full Text: PDF (53 kB)

Yurii Vasil'evich Shmartsev (On the 75th Anniversary of His Birth)

pp. 1429-1430    Full Text: PDF (82 kB)

Boris Vasil'evich Tsarenkov (On the 75th Anniversary of His Birth)

pp. 1431-1432    Full Text: PDF (57 kB)