Physics of the Solid State -- January 2004
Volume 46, Issue 1,
pp. 1-192
Oleg Vladimirovich Losev: Pioneer of Semiconductor Electronics (Celebrating One Hundred Years since His Birth)
M. A. Novikov
pp. 1-4
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PROCEEDINGS OF THE CONFERENCE DEDICATED TO O. V. LOSEV (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
Electroluminescence Efficiency of Silicon Diodes
M. S. Bresler, O. B. Gusev, B. P. Zakharchenya, and I. N. Yassievich
pp. 5-9
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Structural and Photoluminescence Properties of Heteroepitaxial Silicon-on-Sapphire Layers
S. P. Svetlov, V. Yu. Chalkov, V. G. Shengurov, Yu. N. Drozdov, Z. F. Krasil'nik, L. V. Krasil'nikova, M. V. Stepikhova, D. A. Pavlov, T. V. Pavlova, P. A. Shilyaev, and A. F. Khokhlov[dagger]
pp. 10-12
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Edge Electroluminescence of Silicon: An Amorphous-Silicon–Crystalline-Silicon Heterostructure
M. S. Bresler, O. B. Gusev, E. I. Terukov, A. Froitzheim, and W. Fuhs
pp. 13-16
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The Influence of P+, B+, and N+ Ion Implantation on the Luminescence Properties of the SiO2 : nc-Si System
D. I. Tetelbaum, O. N. Gorshkov, V. A. Burdov, S. A. Trushin, A. N. Mikhaylov, D. M. Gaponova, S. V. Morozov, and A. I. Kovalev
pp. 17-21
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Photoluminescence and Structural Defects in Silicon Layers Implanted by Iron Ions
É. A. Shteinman, V. I. Vdovin, A. N. Izotov, Yu. N. Parkhomenko, and A. F. Borun
pp. 22-26
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Phonon-Assisted Radiative Electron–Hole Recombination in Silicon Quantum Dots
V. A. Belyakov, V. A. Burdov, D. M. Gaponova, A. N. Mikhaylov, D. I. Tetelbaum, and S. A. Trushin
pp. 27-31
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Formation of Two-Dimensional Photonic-Crystal Structures in Silicon for Near-Infrared Region Using Fine Focused Ion Beams
A. F. Vyatkin, E. Yu. Gavrilin, Yu. B. Gorbatov, V. V. Starkov, and V. V. Sirotkin
pp. 32-34
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Effect of the Postimplantation-Annealing Temperature on the Properties of Silicon Light-Emitting Diodes Fabricated through Boron Ion Implantation into n-Si
N. A. Sobolev, A. M. Emel'yanov, E. I. Shek, and V. I. Vdovin
pp. 35-39
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Silicon LEDs Emitting in the Band-to-Band Transition Region: Effect of Temperature and Current Strength
A. M. Emel'yanov, N. A. Sobolev, and E. I. Shek
pp. 40-44
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New Mechanisms of Localization of Charge Carriers in Nanosilicon
I. V. Blonskyy, A. Yu. Vakhnin, V. N. Kadan, and A. K. Kadashchuk
pp. 45-48
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Si/Ge Nanostructures for Optoelectronics Applications
V. A. Egorov, G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov, N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov, and P. Werner
pp. 49-55
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Ge/Si Quantum Dots in External Electric and Magnetic Fields
A. V. Dvurechenskii, A. I. Yakimov, A. V. Nenashev, and A. F. Zinov'eva
pp. 56-59
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Photoluminescence of Self-Assembled GeSi/Si(001) Nanoislands of Different Shapes
N. V. Vostokov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, and A. N. Yablonskii
pp. 60-63
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Synthesis of Ordered Ge–Si Heterostructures Containing Ultrasmall Germanium Nanoclusters
Yu. B. Bolkhovityanov, S. Ts. Krivoshchapov, A. I. Nikiforov, B. Z. Ol'shanetskii, O. P. Pchelyakov, L. V. Sokolov, and S. A. Teys
pp. 64-66
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Correlation between the Energy of SiGe Nanoislands and Their Shape and Size
M. Ya. Valakh, V. N. Dzhagan, Z. F. Krasil'nik, P. M. Lytvyn, D. N. Lobanov, E. V. Mozdor, A. V. Novikov, V. A. Yukhymchuk, and A. M. Yaremko
pp. 67-70
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Photoluminescence of Si/Ge Nanostructures Grown by Molecular-Beam Epitaxy at Low Temperatures
T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, N. N. Sibel'din, and V. A. Tsvetkov
pp. 71-73
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Stepwise Dependence of the Photoconductivity of Si/Ge Structures with Quantum Dots on the Interband Illumination Intensity
O. A. Shegai, V. A. Markov, and A. I. Nikiforov
pp. 74-76
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Growth and Structure of Ge Nanoislands on an Atomically Clean Silicon Oxide Surface
A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, S. A. Teys, and A. K. Gutakovskii
pp. 77-79
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Growth of Germanium Nanoislands and Nanowires on Singular and Vicinal Si(111) Surfaces Prior to the Formation of a Wetting Layer
S. A. Teys, A. B. Talochkin, K. N. Romanyuk, and B. Z. Olshanetsky
pp. 80-84
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Composition and Elastic Stresses in Multilayer Structures with Si1 – xGex Nanoislands
M. Ya. Valakh, V. N. Dzhagan, P. M. Lytvyn, V. A. Yukhymchuk, Z. F. Krasil'nik, A. V. Novikov, and D. N. Lobanov
pp. 85-88
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Self-Assembling of Ge Quantum Dots in the CaF2/Ge/CaF2/Si Heteroepitaxial System and the Development of Tunnel-Resonance Diode on Its Basis
L. V. Sokolov, A. S. Deryabin, A. I. Yakimov, O. P. Pchelyakov, and A. V. Dvurechenskii
pp. 89-91
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Resonant Raman Scattering by Strained and Relaxed Germanium Quantum Dots
A. G. Milekhin, A. I. Nikiforov, M. Yu. Ladanov, O. P. Pchelyakov, S. Schulze, and D. R. T. Zahn
pp. 92-96
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Er3+ Photoluminescence Excitation Spectra in Erbium-Doped Epitaxial Silicon Structures
B. A. Andreev, Z. F. Krasil'nik, D. I. Kryzhkov, A. N. Yablonskii, V. P. Kuznetsov, T. Gregorkiewicz, and M. A. J. Klik
pp. 97-100
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Effect of Growth Conditions on Photoluminescence of Erbium-Doped Silicon Layers Grown Using Sublimation Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil'nik, and D. I. Kryzhkov
pp. 101-103
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High-Efficiency Erbium Ion Luminescence in Silicon Nanocrystal Systems
P. K. Kashkarov, B. V. Kamenev, M. G. Lisachenko, O. A. Shalygina, V. Yu. Timoshenko, M. Schmidt, J. Heitmann, and M. Zacharias
pp. 104-108
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Effect of the p–n Junction Breakdown Mechanism on the Er3+ Ion Electroluminescence Intensity and Excitation Efficiency in Si : Er Epitaxial Layers Grown through Sublimation Molecular Beam Epitaxy
V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil'nik, V. P. Kuznetsov, V. N. Shabanov, L. V. Krasil'nikova, D. I. Kryzhkov, and M. N. Drozdov
pp. 109-112
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The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films
M. V. Stepikhova, M. F. Cerqueira, M. Losurdo, M. M. Giangregorio, E. Alves, T. Monteiro, and M. J. Soares
pp. 113-117
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Intraband Absorption and Emission of Light in Quantum Wells and Quantum Dots
L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, S. Hanna, A. Seilmeier, Kh. Moumanis, F. Julien, A. E. Zhukov, and V. M. Ustinov
pp. 118-121
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Photoconductivity of Lead Telluride-Based Doped Alloys in the Submillimeter Wavelength Range
K. G. Kristovskii, A. E. Kozhanov, D. E. Dolzhenko, I. I. Ivanchik, D. Watson, and D. R. Khokhlov
pp. 122-124
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Shallow-Impurity-Assisted Transitions in the Course of Submillimeter Magnetoabsorption of Strained Ge/GeSi(111) Quantum-Well Heterostructures
V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov, D. V. Kozlov, and O. A. Kuznetsov
pp. 125-129
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Intersubband Cyclotron Resonance of Holes in Strained Ge/GeSi(111) Heterostructures with Germanium Wide Quantum Wells and Cyclotron Resonance of 1L Electrons in GeSi Layers
V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov, D. V. Kozlov, and O. A. Kuznetsov
pp. 130-137
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Magnetotransport Characterization of THz Detectors Based on Plasma Oscillations in Submicron Field-Effect Transistors
J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska, A. Piotrowska, K. Golaszewska, M. S. Shur, D. Smirnov, V. Gavrilenko, A. Antonov, and S. Morozov
pp. 138-145
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Electron Transport and Terahertz Radiation Detection in Submicrometer-Sized GaAs/AlGaAs Field-Effect Transistors with Two-Dimensional Electron Gas
A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, S. V. Morozov, A. A. Dubinov, J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska, A. Piotrowska, K. Golaszewska, and M. S. Shur
pp. 146-149
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Cyclotron Resonance of Holes in Silicon in Quantizing Magnetic Fields
D. B. Veksler, V. I. Gavrilenko, and K. E. Spirin
pp. 150-152
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Plasmon-Induced Terahertz Absorption and Photoconductivity in a Grid-Gated Double-Quantum-Well Structure
V. V. Popov, T. V. Teperik, O. V. Polischuk, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke
pp. 153-156
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Destruction and Stabilization of the Electromagnetic Transparency of a Semiconductor Superlattice
Yu. A. Romanov and Yu. Yu. Romanova
pp. 157-163
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On a Superlattice Bloch Oscillator
Yu. A. Romanov and Yu. Yu. Romanova
pp. 164-169
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Bose Condensation of Interwell Excitons in Lateral Traps: A Phase Diagram
A. A. Dremin, A. V. Larionov, and V. B. Timofeev
pp. 170-172
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Electronic States and Vibration Spectra of CdTe/ZnTe Quantum Dot Superlattices
V. S. Bagaev, L. K. Vodop'yanov, V. S. Vinogradov, V. V. Zaitsev, S. P. Kozyrev, N. N. Mel'nik, E. E. Onishchenko, and G. Karczewski
pp. 173-175
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Resonant Stokes and Anti-Stokes Raman Scattering of Light in CdSe/ZnSe Nanostructures
M. Ya. Valakh, V. V. Strelchuk, G. N. Semenova, and Yu. G. Sadofyev
pp. 176-178
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SEMICONDUCTORS AND DIELECTRICS
The Influence of Hydrostatic Pressure on the Static and Dynamic Properties of an InSe Crystal: A First-Principles Study
K. Z. Rushchanskii
pp. 179-187
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MAGNETISM AND FERROELECTRICITY
Temperature Dependences of the Dielectric Properties of Lithium–Titanium Ferrite Ceramics
A. V. Malyshev, V. V. Peshev, and A. M. Pritulov
pp. 188-191
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ERRATA
Erratum: "Phase Separation of the Spin System in the La0.93Sr0.07MnO3 Crystal" [Phys. Solid State 45 (12), 2297 (2003)]
S. F. Dubunin, V. E. Arkhipov, S. G. Teploukhov, V. D. Parkhomenko, N. N. Loshkareva, and N. I. Solin
p. 192
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