dc.identifier.uri | http://hdl.handle.net/1951/59711 | |
dc.identifier.uri | http://hdl.handle.net/11401/71281 | |
dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
dc.format | Monograph | |
dc.format.medium | Electronic Resource | en_US |
dc.language.iso | en_US | |
dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
dc.type | Dissertation | |
dcterms.abstract | A variety of new
mid wave infrared (MWIR: 3~5 Μm) and long wave infrared (LWIR: 5~10 Μm) optoelectronic devices have been
designed, fabricated, and characterized. Application of the strain engineering and new quinternary material into the
active region of light emitting diodes (LEDs) allowed for increasing the internal quantum efficiency more than
twofold. InAs/GaSb type II superlattice (SL) active region was used for the LWIR LEDs. It was experimentally
demonstrated that only a few periods in the SL contribute to the radiative recombination process, which concludes
that active region cascading with fewer periods will be more effective in the LWIR SL LED design. Application of the
cascading scheme enabled type I QW Λ=2 Μm LEDs generating record quasi-continuous wave (qCW) power of 10
mW at room temperature. Novel scalable pixel design and fabrication method realized highly dimensional LED arrays with
512 x 512 pixels and the independently controlled dual color LED arrays emitting at 2 Μ m and 3 Μ m. A new
precise technique for calibration of LED power has been developed. For lasers, research has been focused on
development of single mode tunable lasers. The diode lasers generating 100 mW room temperature CW power at 2 Μm
with diffraction limited beam shape have been fabricated using a cost effective wet etching technique. A new
principle of laser tuning has been developed using optical pumping. Wavelength of quantum cascade lasers emitting at
9 Μ m was tuned as high as 3 nm at room temperature using optical control of the effective refractive index over
the lasing mode. A novel opto-pair scheme for methane detection was designed and demonstrated. The photodetectors
with nBn and nBp active region showed the specific detectivity of ~10<super>9</super>
cmHz<super>1/2</super>/W at room temperature and were coupled with the LED emitting at 3.3 Μm. | |
dcterms.available | 2013-05-22T17:34:51Z | |
dcterms.available | 2015-04-24T14:46:48Z | |
dcterms.contributor | Belenky, Gregory , Suchalkin, Sergey | en_US |
dcterms.creator | Jung, Seungyong | |
dcterms.dateAccepted | 2013-05-22T17:34:51Z | |
dcterms.dateAccepted | 2015-04-24T14:46:48Z | |
dcterms.dateSubmitted | 2013-05-22T17:34:51Z | |
dcterms.dateSubmitted | 2015-04-24T14:46:48Z | |
dcterms.description | Department of Electrical Engineering | en_US |
dcterms.extent | 153 pg. | en_US |
dcterms.format | Monograph | |
dcterms.format | Application/PDF | en_US |
dcterms.identifier | Jung_grad.sunysb_0771E_11198 | en_US |
dcterms.identifier | http://hdl.handle.net/1951/59711 | |
dcterms.identifier | http://hdl.handle.net/11401/71281 | |
dcterms.issued | 2012-12-01 | |
dcterms.language | en_US | |
dcterms.provenance | Made available in DSpace on 2013-05-22T17:34:51Z (GMT). No. of bitstreams: 1
Jung_grad.sunysb_0771E_11198.pdf: 4325340 bytes, checksum: 502b5173f2094da2d0851360d803f6e0 (MD5)
Previous issue date: 1 | en |
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Jung_grad.sunysb_0771E_11198.pdf.jpg: 1894 bytes, checksum: a6009c46e6ec8251b348085684cba80d (MD5)
Jung_grad.sunysb_0771E_11198.pdf.txt: 261826 bytes, checksum: 023b3c93be19bbb155a4119ed1a2eb37 (MD5)
Jung_grad.sunysb_0771E_11198.pdf: 4325340 bytes, checksum: 502b5173f2094da2d0851360d803f6e0 (MD5)
Previous issue date: 1 | en |
dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
dcterms.subject | laser, LED, mid infrared, optoelectronics, photodetector,
semiconductor | |
dcterms.subject | Electrical
engineering | |
dcterms.title | Mid Infrared III-V Semiconductor Emitters and
Detectors | |
dcterms.type | Dissertation | |