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dc.identifier.urihttp://hdl.handle.net/1951/55957
dc.identifier.urihttp://hdl.handle.net/11401/71562
dc.description.sponsorshipThis work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.en_US
dc.formatMonograph
dc.format.mediumElectronic Resourceen_US
dc.language.isoen_US
dc.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.
dc.typeDissertation
dcterms.abstractDoping is one of the most powerful tools for tuning the electronic properties of functional materials. Well known examples include doped semiconductors and the Cu and Fe based high temperature superconductors. Besides introducing charge carriers and chemical pressure, it is almost inevitable that dopants will introduce quenched disorder into the system. This can have a wide range of consequences for the electronic structure, such as electric and thermal resistance, a deformation of the nodal structure of a superconductor or Anderson localization. In this thesis the influence of disordered dopants is studied by calculating the configuration-averaged spectral function <A(k,w)> from first principles within the super cell approximation. To overcome two major problems of the super cell approximation, the band folding and the computational expense, two Wannier function based first principles techniques are developed. The developed methodology is applied to address three realistic materials problems. The first problem is on the influence of disorder on the Fermi surface of NaxCoO2, an important thermoelectric material. The second problem is on the role of oxygen vacancies in the room temperature ferromagnetism in the recently discovered dilute magnetic semiconductor Cu:ZnO. The third problem is on the carrier doping and charge localization in transition metal doped iron based superconductors.
dcterms.available2012-05-17T12:19:50Z
dcterms.available2015-04-24T14:47:55Z
dcterms.contributorPhilip Allenen_US
dcterms.contributorWei Ku.en_US
dcterms.contributorAxel Dreesen_US
dcterms.contributorMark S. Hybertsen.en_US
dcterms.creatorBerlijn, Tom
dcterms.dateAccepted2012-05-17T12:19:50Z
dcterms.dateAccepted2015-04-24T14:47:55Z
dcterms.dateSubmitted2012-05-17T12:19:50Z
dcterms.dateSubmitted2015-04-24T14:47:55Z
dcterms.descriptionDepartment of Physicsen_US
dcterms.formatApplication/PDFen_US
dcterms.formatMonograph
dcterms.identifierBerlijn_grad.sunysb_0771E_10610.pdfen_US
dcterms.identifierhttp://hdl.handle.net/1951/55957
dcterms.identifierhttp://hdl.handle.net/11401/71562
dcterms.issued2011-08-01
dcterms.languageen_US
dcterms.provenanceMade available in DSpace on 2012-05-17T12:19:50Z (GMT). No. of bitstreams: 1 Berlijn_grad.sunysb_0771E_10610.pdf: 13734480 bytes, checksum: 815e087372617b10603d8c544fbeaf81 (MD5) Previous issue date: 1en
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dcterms.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.
dcterms.subjectPhysics
dcterms.titleEffects of Disordered Dopants on the Electronic Structure of Functional Materials: Wannier Function-Based First Principles Methods for Disordered Systems
dcterms.typeDissertation


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