Show simple item record

dc.identifier.urihttp://hdl.handle.net/1951/56037
dc.identifier.urihttp://hdl.handle.net/11401/71629
dc.description.sponsorshipThis work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.en_US
dc.formatMonograph
dc.format.mediumElectronic Resourceen_US
dc.language.isoen_US
dc.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.
dc.typeDissertation
dcterms.abstractThe carbon nanotube is a promising material for future micro- and nano-scale electronics because of its unique electronic properties, high carrier mobility and extraordinary capacity for high current density. In particular, semiconducting carbon nanotubes are direct bandgap materials with a typical energy gap in the order of 1 eV, which means they emit light in the near-infrared range, making them an attractive option in telecommunications applications. However, there have been few systematic investigations of electrically-induced light emission (i.e. electroluminescence) from carbon nanotubes, and their emission properties are not well understood. In this dissertation, we explore the characteristics of electroluminescence in three different types of carbon-nanotube devices. The first is a single-tube field-effect transistor (CNTFET), whose emission has previously been found to have a very broad spectral shape and low emission efficiency. We analyze the spectral shape in detail, which reveals that a high electric field near metal contacts contributes most to the bias-dependent component of broadening, in addition to smaller contributions from tube nonuniformity, inelastic scattering of phonons, high temperature, etc. In the second part of the study, single-tube light-emitting diodes are constructed by employing a split top-gate scheme. The split gate creates p- and n-doped regions electrostatically, so that electrons and holes combine between the two sections and can decay radiatively. This configuration creates electron-hole pairs under much lower electric fields and gives us a greater control over carrier distribution in the device channel, resulting in much narrower spectral linewidths and an emission intensity several orders of magnitude larger than that of CNTFETs. The much better signal-to-noise also leads to the observation of emission from defect-induced states. Finally, we extend the idea of the single-tube p-n diode and fabricate CNT film diodes from many purified tubes aligned in parallel. While the operating principle is somewhat different from that of single-tube diodes because of the presence of metallic tubes in the material, the film diodes nonetheless show a rectifying behavior and much greater light intensity than single-tube devices. With their superior light output and robustness, they bring us one step closer to a real-world application of carbon nanotubes optoelectronics.
dcterms.available2012-05-17T12:20:54Z
dcterms.available2015-04-24T14:48:18Z
dcterms.contributorPhilip B. Allenen_US
dcterms.contributorEmilio E. Mendez.en_US
dcterms.contributorHarold J. Metcalfen_US
dcterms.contributorStanislaus Wong.en_US
dcterms.creatorKinoshita, Megumi
dcterms.dateAccepted2012-05-17T12:20:54Z
dcterms.dateAccepted2015-04-24T14:48:18Z
dcterms.dateSubmitted2012-05-17T12:20:54Z
dcterms.dateSubmitted2015-04-24T14:48:18Z
dcterms.descriptionDepartment of Physicsen_US
dcterms.formatMonograph
dcterms.formatApplication/PDFen_US
dcterms.identifierhttp://hdl.handle.net/1951/56037
dcterms.identifierKinoshita_grad.sunysb_0771E_10551.pdfen_US
dcterms.identifierhttp://hdl.handle.net/11401/71629
dcterms.issued2011-05-01
dcterms.languageen_US
dcterms.provenanceMade available in DSpace on 2012-05-17T12:20:54Z (GMT). No. of bitstreams: 1 Kinoshita_grad.sunysb_0771E_10551.pdf: 5271190 bytes, checksum: bcc6cc3f1c41564c09ecdc8d4621c826 (MD5) Previous issue date: 1en
dcterms.provenanceMade available in DSpace on 2015-04-24T14:48:18Z (GMT). No. of bitstreams: 3 Kinoshita_grad.sunysb_0771E_10551.pdf.jpg: 1894 bytes, checksum: a6009c46e6ec8251b348085684cba80d (MD5) Kinoshita_grad.sunysb_0771E_10551.pdf: 5271190 bytes, checksum: bcc6cc3f1c41564c09ecdc8d4621c826 (MD5) Kinoshita_grad.sunysb_0771E_10551.pdf.txt: 261666 bytes, checksum: 31ebf5d0fed5f56c7e81eb43995bb28e (MD5) Previous issue date: 1en
dcterms.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.
dcterms.subjectPhysics
dcterms.subjectCarbon Nanostructures, Condensed Matter - Mesoscale and Nanoscale Physics, Nano-Optics
dcterms.titleOptoelectronics with Carbon Nanotubes
dcterms.typeDissertation


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record