| dc.identifier.uri | http://hdl.handle.net/11401/76070 | |
| dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
| dc.format | Monograph | |
| dc.format.medium | Electronic Resource | en_US |
| dc.language.iso | en_US | |
| dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dc.type | Thesis | |
| dcterms.abstract | Silicon carbide is a promising semiconductor material with more preferable properties than the traditional materials like silicon dioxide and gallium arsenide. With large band-gap, high breakdown voltage, high thermal conductivity and good resistance in radiation environment, SiC is widely used in electronic devices especially under high frequency, high voltage and high temperature. Despite of its good properties, the application of SiC is limited by the growth of high quality single crystal boule, namely, the defects inside the SiC crystals have deleterious effects on the performance of devices made of it. In this thesis, the combination of techniques including Synchrotron White Beam X-ray Topography, Monochromatic X-ray Topography and Nomarski Optical Microscopy is used, and the distribution of dislocations including Basal Plane Dislocations, Threading Edge Dislocations and Threading Screw Dislocations are measured and other defects like Stacking Fault, Low Angle Grain Boundary and V-shape are also characterized. Due to the wide band-gap and high efficiency of emitting light, gallium nitride is widely used in LED industry. Similar with silicon carbide, gallium nitride crystal also suffers from the defects inside the crystals. In this thesis, High Resolution of X-ray Diffraction is used to measure the rocking curve of the crystal, and software HXRD is used to simulated the rocking curve of perfect crystal. And the Full Width Half Maximum is calculated to evaluate the overall quality of the crystal. | |
| dcterms.available | 2017-09-18T23:49:58Z | |
| dcterms.contributor | Raghothamachar, Balaji | en_US |
| dcterms.contributor | Dudley, Michael | en_US |
| dcterms.contributor | Venkatesh, T.A.. | en_US |
| dcterms.creator | Yang, Xiaolin | |
| dcterms.dateAccepted | 2017-09-18T23:49:58Z | |
| dcterms.dateSubmitted | 2017-09-18T23:49:58Z | |
| dcterms.description | Department of Materials Science and Engineering | en_US |
| dcterms.extent | 73 pg. | en_US |
| dcterms.format | Monograph | |
| dcterms.format | Application/PDF | en_US |
| dcterms.identifier | http://hdl.handle.net/11401/76070 | |
| dcterms.issued | 2016-12-01 | |
| dcterms.language | en_US | |
| dcterms.provenance | Made available in DSpace on 2017-09-18T23:49:58Z (GMT). No. of bitstreams: 1
Yang_grad.sunysb_0771M_12849.pdf: 7355406 bytes, checksum: 45859ced72b101539f550c2d46b26eba (MD5)
Previous issue date: 1 | en |
| dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dcterms.subject | HRXRD, semiconductor, x-ray topography | |
| dcterms.subject | Materials Science | |
| dcterms.title | Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting Applications | |
| dcterms.type | Thesis | |
