| dc.identifier.uri | http://hdl.handle.net/11401/76352 | |
| dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
| dc.format | Monograph | |
| dc.format.medium | Electronic Resource | en_US |
| dc.language.iso | en_US | |
| dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dc.type | Thesis | |
| dcterms.abstract | In semiconductor technology for solar applications, the demand for high level of structural perfection in single crystal silicon has increased. The defects in the crystals can affect the efficiency of solar cells, so the study of imperfections is important for providing feedback to develop high quality crystal. X-ray topography is a nondestructive method and a powerful tool to evaluate crystals for technological applications, growth and processing. In this study, defects in homoepitaxial silicon epilayers grown by chemical vapor deposition (CVD) for solar cell application with the dislocation density of 9.4×〖 10〗 ^3cm-2 have been mapped and characterized by synchrotron white beam X-ray topography (SWBXT), synchrotron monochromated beam X-ray topography, high resolution X-ray diffraction and optical microscopy. In free standing 200µm thick epitaxial single crystal silicon detached from the silicon substrate, a crisscross network of screw dislocations, misfit dislocations and multiple stacking fault configurations are revealed and quantitatively characterized. The silicon epitaxial layer (~60µm) attached to the silicon substrate is characterized by threading dislocations, misfit dislocations and a non-uniform distribution of bending stains from mismatch. These defects can impact the performance and yield of this CVD process for solar cell manufacturing. | |
| dcterms.abstract | In semiconductor technology for solar applications, the demand for high level of structural perfection in single crystal silicon has increased. The defects in the crystals can affect the efficiency of solar cells, so the study of imperfections is important for providing feedback to develop high quality crystal. X-ray topography is a nondestructive method and a powerful tool to evaluate crystals for technological applications, growth and processing. In this study, defects in homoepitaxial silicon epilayers grown by chemical vapor deposition (CVD) for solar cell application with the dislocation density of 9.4×〖 10〗 ^3cm-2 have been mapped and characterized by synchrotron white beam X-ray topography (SWBXT), synchrotron monochromated beam X-ray topography, high resolution X-ray diffraction and optical microscopy. In free standing 200µm thick epitaxial single crystal silicon detached from the silicon substrate, a crisscross network of screw dislocations, misfit dislocations and multiple stacking fault configurations are revealed and quantitatively characterized. The silicon epitaxial layer (~60µm) attached to the silicon substrate is characterized by threading dislocations, misfit dislocations and a non-uniform distribution of bending stains from mismatch. These defects can impact the performance and yield of this CVD process for solar cell manufacturing. | |
| dcterms.available | 2017-09-20T16:50:05Z | |
| dcterms.contributor | Raghothamachar, Balaji | en_US |
| dcterms.contributor | Dudley, Micheal | en_US |
| dcterms.contributor | Venkatesh, T.A.. | en_US |
| dcterms.creator | Wang, Hao | |
| dcterms.dateAccepted | 2017-09-20T16:50:05Z | |
| dcterms.dateSubmitted | 2017-09-20T16:50:05Z | |
| dcterms.description | Department of Materials Science and Engineering. | en_US |
| dcterms.extent | 47 pg. | en_US |
| dcterms.format | Monograph | |
| dcterms.format | Application/PDF | en_US |
| dcterms.identifier | http://hdl.handle.net/11401/76352 | |
| dcterms.issued | 2013-12-01 | |
| dcterms.language | en_US | |
| dcterms.provenance | Made available in DSpace on 2017-09-20T16:50:05Z (GMT). No. of bitstreams: 1
Wang_grad.sunysb_0771M_11435.pdf: 2333362 bytes, checksum: 8e14591caa0905b42fdfad0d837417ab (MD5)
Previous issue date: 1 | en |
| dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dcterms.subject | Materials Science | |
| dcterms.title | Characterization of Defects in Single Crystal Epitaxial Silicon for Solar cells | |
| dcterms.type | Thesis | |
