| dc.identifier.uri | http://hdl.handle.net/11401/77453 | |
| dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
| dc.format | Monograph | |
| dc.format.medium | Electronic Resource | en_US |
| dc.language.iso | en_US | |
| dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dc.type | Dissertation | |
| dcterms.abstract | This work showed that InAsSb was one of the promising material systems for infrared applications in spectral region longer than 7 µm. InAsSb has the narrowest bandgap among group III-V bulk materials. Together with AlInAsSb and GaInSb, such Sb based alloys provide an interesting material system for fundamental research and optoelectronics applications. The development of high quality InAsSb was based on the metamorphic growth on linearly compositionally graded buffer. The metamorphic growth allowed to characterize the properties of unrelaxed materials. Bandgap as narrow as 90 meV was demonstrated from InAsSb with 60% Sb composition at 77K, which was the narrowest bandgap ever reported for this material. Long lifetime and high hole mobility were also demonstrated in InAsSb with energy bandgap of 0.124 eV at 77K. In order to suppress depletion region in p-n junction, the nBn heterostructures based on bulk InAsSb were designed and fabricated for long wavelength infrared (λ>7 μm) photo-detections. The background limited performance has been demonstrated in the devices operating at temperatures up to 100K. Utilizing the virtual substrate technique, a new material system, the strain-balanced ultra-thin periodic structure InAsSbx/InAsSby was developed. It is free from the constraint of lattice constant in designing strain-balanced structures. Materials with short period demonstrated an optical bandgap as narrow as 0.06 eV at 20 K. Characterization showed that these materials preserve fundamental absorption and minority hole transport properties of bulk alloys challenged to achieve with alternative SLS material systems. | |
| dcterms.abstract | This work showed that InAsSb was one of the promising material systems for infrared applications in spectral region longer than 7 µm. InAsSb has the narrowest bandgap among group III-V bulk materials. Together with AlInAsSb and GaInSb, such Sb based alloys provide an interesting material system for fundamental research and optoelectronics applications. The development of high quality InAsSb was based on the metamorphic growth on linearly compositionally graded buffer. The metamorphic growth allowed to characterize the properties of unrelaxed materials. Bandgap as narrow as 90 meV was demonstrated from InAsSb with 60% Sb composition at 77K, which was the narrowest bandgap ever reported for this material. Long lifetime and high hole mobility were also demonstrated in InAsSb with energy bandgap of 0.124 eV at 77K. In order to suppress depletion region in p-n junction, the nBn heterostructures based on bulk InAsSb were designed and fabricated for long wavelength infrared (λ>7 μm) photo-detections. The background limited performance has been demonstrated in the devices operating at temperatures up to 100K. Utilizing the virtual substrate technique, a new material system, the strain-balanced ultra-thin periodic structure InAsSbx/InAsSby was developed. It is free from the constraint of lattice constant in designing strain-balanced structures. Materials with short period demonstrated an optical bandgap as narrow as 0.06 eV at 20 K. Characterization showed that these materials preserve fundamental absorption and minority hole transport properties of bulk alloys challenged to achieve with alternative SLS material systems. | |
| dcterms.available | 2017-09-20T16:52:43Z | |
| dcterms.contributor | Kamoua, Ridha | en_US |
| dcterms.contributor | Belenky, Gregory | en_US |
| dcterms.contributor | Donetski, Dmitri | en_US |
| dcterms.contributor | Westerfeld, David | en_US |
| dcterms.contributor | Hwang, David. | en_US |
| dcterms.creator | LIN, YOUXI | |
| dcterms.dateAccepted | 2017-09-20T16:52:43Z | |
| dcterms.dateSubmitted | 2017-09-20T16:52:43Z | |
| dcterms.description | Department of Electrical Engineering. | en_US |
| dcterms.extent | 131 pg. | en_US |
| dcterms.format | Application/PDF | en_US |
| dcterms.format | Monograph | |
| dcterms.identifier | http://hdl.handle.net/11401/77453 | |
| dcterms.issued | 2016-05-01 | |
| dcterms.language | en_US | |
| dcterms.provenance | Made available in DSpace on 2017-09-20T16:52:43Z (GMT). No. of bitstreams: 1
LIN_grad.sunysb_0771E_12756.pdf: 2450580 bytes, checksum: 6c935baea63011403088a06abe866c5f (MD5)
Previous issue date: 2016 | en |
| dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dcterms.subject | Engineering | |
| dcterms.subject | group III-V compounds, Long wavelength Infrared, Metamorphic growth, Optoelectronics, Semiconductor physics, superlattice | |
| dcterms.title | Optoelectronics materials and heterostructures based on metamorphic grown InAsSb | |
| dcterms.type | Dissertation | |
