| dc.identifier.uri | http://hdl.handle.net/11401/77473 | |
| dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
| dc.format | Monograph | |
| dc.format.medium | Electronic Resource | en_US |
| dc.language.iso | en_US | |
| dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dc.type | Dissertation | |
| dcterms.abstract | Mid infrared semiconductor diode lasers have broad range of applications, including light detection and ranging, infrared countermeasures, medical treatment and spectroscopy. Compact and efficient devices operating in continuous-wave (CW) regime at room temperature (RT) are preferred for those applications. This work is focusing on the development of GaSb-based type-I quantum wells (QWs) diode lasers in the spectral range of 2.2 - 3.4 µm, with high output power and Diffraction-Limited beam. The novel design of cascade type-I QWs diode lasers was proposed. The interband tunneling through the " leaky" window in band alignment at GaSb/InAs heterointerface was used to realize cascade pumping of type-I GaSb QWs in the device active region. The GaSb/InAs tunnel junction required only moderate n-doping on InAs side and, thus, did not generate excessive absorption losses despite being located near the transfer mode peak. The two-stage cascade design provides twofold increase of the device slope efficiency as compared to that of single stage diode lasers. Corresponding high CW power RT operated 2.4 - 3.3 µm two-stage cascade diode lasers were fabricated. The cascade structure was further optimized to improve the QW optical confinement factor, and the threshold current density was reduced. The two- and three-stage cascade diode lasers demonstrated CW output power of 650 mW and 960 mW at 3 µm in RT, respectively. Diffraction-Limited and distributed feedback diode lasers with narrow ridge waveguide were designed and fabricated. Various etching techniques (wet etching, Cl2-free and Cl2-based dry etching) were developed to improve the etching profile and lasers performance. Diffraction-Limited cascade diode lasers demonstrated CW output power of 100 mW at 3 µm, and 40 mW at 3.15 µm in RT, respectively. Distributed feedback 3.27 μ m diode lasers demonstrated CW output power of 15 mW at RT. | |
| dcterms.abstract | Mid infrared semiconductor diode lasers have broad range of applications, including light detection and ranging, infrared countermeasures, medical treatment and spectroscopy. Compact and efficient devices operating in continuous-wave (CW) regime at room temperature (RT) are preferred for those applications. This work is focusing on the development of GaSb-based type-I quantum wells (QWs) diode lasers in the spectral range of 2.2 - 3.4 µm, with high output power and Diffraction-Limited beam. The novel design of cascade type-I QWs diode lasers was proposed. The interband tunneling through the " leaky" window in band alignment at GaSb/InAs heterointerface was used to realize cascade pumping of type-I GaSb QWs in the device active region. The GaSb/InAs tunnel junction required only moderate n-doping on InAs side and, thus, did not generate excessive absorption losses despite being located near the transfer mode peak. The two-stage cascade design provides twofold increase of the device slope efficiency as compared to that of single stage diode lasers. Corresponding high CW power RT operated 2.4 - 3.3 µm two-stage cascade diode lasers were fabricated. The cascade structure was further optimized to improve the QW optical confinement factor, and the threshold current density was reduced. The two- and three-stage cascade diode lasers demonstrated CW output power of 650 mW and 960 mW at 3 µm in RT, respectively. Diffraction-Limited and distributed feedback diode lasers with narrow ridge waveguide were designed and fabricated. Various etching techniques (wet etching, Cl2-free and Cl2-based dry etching) were developed to improve the etching profile and lasers performance. Diffraction-Limited cascade diode lasers demonstrated CW output power of 100 mW at 3 µm, and 40 mW at 3.15 µm in RT, respectively. Distributed feedback 3.27 μ m diode lasers demonstrated CW output power of 15 mW at RT. | |
| dcterms.available | 2017-09-20T16:52:46Z | |
| dcterms.contributor | Dhadwal, Harbans | en_US |
| dcterms.contributor | Shterengas, Leon | en_US |
| dcterms.contributor | Gouzman, Mikhail | en_US |
| dcterms.contributor | Hwang, David. | en_US |
| dcterms.creator | Liang, Rui | |
| dcterms.dateAccepted | 2017-09-20T16:52:46Z | |
| dcterms.dateSubmitted | 2017-09-20T16:52:46Z | |
| dcterms.description | Department of Electrical Engineering. | en_US |
| dcterms.extent | 131 pg. | en_US |
| dcterms.format | Monograph | |
| dcterms.format | Application/PDF | en_US |
| dcterms.identifier | http://hdl.handle.net/11401/77473 | |
| dcterms.issued | 2015-08-01 | |
| dcterms.language | en_US | |
| dcterms.provenance | Made available in DSpace on 2017-09-20T16:52:46Z (GMT). No. of bitstreams: 1
Liang_grad.sunysb_0771E_12174.pdf: 4398687 bytes, checksum: d7ebce3b1da9a7670f1758d6094d9665 (MD5)
Previous issue date: 2014 | en |
| dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dcterms.subject | Engineering | |
| dcterms.subject | cascade, Diode, GaSb, infrared, Laser, type-I | |
| dcterms.title | Mid-infrared GaSb-based Type-I Quantum Wells Diode Lasers Utilizing Cascade Pumping Scheme | |
| dcterms.type | Dissertation | |
