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dc.identifier.urihttp://hdl.handle.net/11401/78484
dc.description.sponsorshipThis work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.en_US
dc.formatMonograph
dc.format.mediumElectronic Resourceen_US
dc.typeDissertation
dcterms.available2018-11-12T17:50:30Z
dcterms.contributorShterengas, Leonen_US
dcterms.creatorWang, Meng
dcterms.dateAccepted2018-11-12T17:50:30Z
dcterms.dateSubmitted2018-11-12T17:50:30Z
dcterms.descriptionDepartment of Electrical Engineering.en_US
dcterms.extent100 pg.en_US
dcterms.formatMonograph
dcterms.identifierhttp://hdl.handle.net/11401/78484
dcterms.issued2018-01-05
dcterms.issued2018
dcterms.provenanceMade available in DSpace on 2018-11-12T17:50:30Z (GMT). No. of bitstreams: 1 Wang_grad.sunysb_0771E_13694.pdf: 5110668 bytes, checksum: fe94459fff903ada77a701829ae6557a (MD5) Previous issue date: 2018-01-05en
dcterms.subjectElectrical engineering
dcterms.subjectGaSb
dcterms.subjectLasers
dcterms.subjectQuantum well
dcterms.titleGaSb-based type-I quantum well tunable diode lasers for spectral range above 3 µm
dcterms.typeDissertation


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