| dc.description | Semiconductors -- October 1999
Volume 33, Issue 10, pp. 1049-1155
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment
I. V. Antonova, V. P. Popov, D. V. Kilanov, E. P. Neustroev, and A. Misuk
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Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
G. �. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, and V. M. Ustinov
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Detection of paramagnetic recombination centers in proton-irradiated silicon
L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, and V. V. Kozlovskii
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Luminescence properties of InAs layers and p���n structures grown by metallorganic chemical vapor deposition
T. I. Voronina, N. V. Zotova, S. S. Kizhayev, S. S. Molchanov, and Yu. P. Yakovlev
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Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jacobson, D. K. Nelson, and V. A. Dmitriev
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The energy spectrum of lead selenide implanted with oxygen
A. N. Veis and N. A. Suvorova
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Autosolitons in an electron���hole plasma/excitons system in silicon at 4.2 K
A. M. Musaev
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Influence of indium doping on the formation of silicon���(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul', V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
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Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel, and L. C. Kimerling
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Electronic properties of a GaAs surface treated with hydrochloric acid
E. F. Venger, S. I. Kirillova, and V. E. Primachenko
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Photoconversion in heterocontacts of CdTe and its analogs with protein
Yu. V. Rud', V. Yu. Rud', I. V. Bodnar', V. V. Shatalova, and G. A. Il'chuk
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Fabrication and photosensitivity of AgInSe2/III���VI isotypic heterojunctions
V. Yu. Rud', V. F. Gremenok, Yu. V. Rud', R. N. Bekimbetov, and I. V. Bodnar'
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Influence of atomic-hydrogen treatment on the surface properties of n���n+ GaAs structures
N. A. Torkhov and S. V. Eremeev
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Production and properties of In/HgGa2S4 Schottky barriers
V. Yu. Rud', Yu. V. Rud', M. C. Ohmer, and P. G. Schunemann
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Effect of hydrogen on the current���voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures
V. P. Voronkov and L. S. Khludkova
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LOW-DIMENSIONAL SYSTEMS
Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance
P. A. Borodovskii and A. F. Buldygin
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Modeling of the electron distribution in AlGaAs/GaAs (delta-Si) structures grown on vicinal surfaces
V. M. Osadchii
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Effect of the configuration of a quantum wire on the electron���phonon interaction
O. V. Kibis
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Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells
I. A. Akimov, V. F. Sapega, D. N. Mirlin, B. P. Zakharchenya, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, and A. A. Sirenko
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Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells
S. I. Borisenko
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Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
V. Ya. Aleshkin, N. A. Bekin, M. N. Buyanova, A. V. Murel', and B. N. Zvonkov
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment
A. I. Mashin, A. F. Khokhlov, S. K. Ignatov, A. A. Shchepalov, and A. G. Razuvaev
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Formation of optically active centers in films of erbium-doped amorphous hydrated silicon
M. M. Mezdrogina, M. P. Annaorazova, E. I. Terukov, I. N. Trapeznikova, and N. Nazarov
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Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies
E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. B. Shuman, and V. A. Tolmachev
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