| dc.description | Semiconductors -- March 1997
Volume 31, Issue 3, pp. 207-320
Modeling the hydrogen distribution accompanying electron injection in SiO2 films in strong electric fields
G. V. Gadiyak
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Effect of electron irradiation on the electrical properties of n-type Pb1 ��� xSnxTe (x ~= 2) alloys
E. P. Skipetrov and A. N. Nekrasova
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Transport phenomena in n-MnxHg1 ��� xTe/Cd0.96Zn0.04Te epitaxial films
G. V. Beketov, A. E. Belyaev, S. A. Vitusevich, S. V. Kavertsev, and S. M. Komirenko
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Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1 ��� xSix heterostructures
Yu. G. Arapov, N. A. Gorodilov, V. N. Neverov, G. I. Kharus, and N. G. Shelushinina
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Defects in intrinsic and pseudodoped amorphous hydrated silicon
O. A. Golikova
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Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates
A. N. Andreev, N. Yu. Smirnova, A. S. Tregubova, M. P. Shcheglov, and V. E. Chelnokov
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Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface
D. A. Pavlov, A. F. Khokhlov, D. V. Shungurov, and V. G. Shengurov
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Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity
M. V. Cheremisin
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Binding energy of shallow donors in asymmetrical systems of quantum wells
V. I. Belyavskii, M. V. Gol'dfarb, S. V. Shevtsov, and Yu. V. Kopaev
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Nonlinear conductivity and current���voltage characteristics of two-dimensional semiconductor superlattices
Yu. A. Romanov and E. V. Demidov
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Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation
V. M. �meksuzyan, G. N. Kamaev, G. N. Feofanov, and V. V. Bolotov
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Shubnikov���de Haas oscillations in HgSe and HgSe under hydrostatic pressure
�. A. Neifel'd, K. M. Demchuk, G. I. Kharus, A. �. Bubnova, L. I. Domanskaya, G. D. Shtrapenin, and S. Yu. Paranchich
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Thermoelectric figure of merit of monopolar semiconductors with finite dimensions
V. S. Zakordonets and G. N. Logvinov
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Galvanomagnetic phenomena in p-Hg1 ��� xMnxTe solid solutions
R. I. Bashirov, R. R. Bashirov, V. A. Elizarov, and A. Yu. Mollaev
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Lattice vibrations in CuInSe2 crystals
N. N. Syrbu, M. Bogdanash, and V. E. Tezlevan
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Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure
E. S. Itskevich, L. M. Kashirskaya, and V. F. Kraidenov
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Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov
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Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te
S. V. Kavertsev and A. E. Belyaev
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Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H
A. G. Kazanskii
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Recombination mechanisms in doped n-type Hg1 ��� xCdxTe crystals and properties of diffusion p+ ��� n junctions based on them
V. V. Teterkin, S. Ya. Stochanskii, and F. F. Sizov
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Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures
E. V. Demidov
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Auger recombination in strained quantum wells
A. D. Andreev and G. G. Zegrya
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Luminescence of porous silicon in the infrared spectral region at room temperature
G. Polisskii, F. Koch, O. M. Sreseli, and A. V. Andrianov
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Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide
A. V. Kalameitsev, D. A. Romanov, A. P. Kovchavtsev, G. L. Kuryshev, K. O. Postnikov, and I. M. Subbotin
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Luminescence of copper-aluminum diselenide
V. A. Savchuk, B. V. Korzun, N. A. Sobolev, and L. A. Makovetskaya
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The electrical activity of isoelectronic germanium impurities in lead chalcogenides
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, A. V. Ermolaev, and S. M. Irkaev
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