| dc.description | Semiconductors -- April 1997
Volume 31, Issue 4, pp. 321-432
Diffusion of boron and phosphorus in silicon during high-temperature ion implantation
G. V. Gadiyak
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Effect of electron and neutron bombardment on the orange luminescence spectra of not specially doped and copper-doped cadmium sulfide single crystals
G. E. Davidyuk, V. S. Manzhara, N. S. Bogdanyuk, A. P. Shavarova, and V. V. Bulatetskii
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Effect of lateral transport of photoinduced charge carriers in a heterostructure with a two-dimensional electron gas
V. A. Sablikov, O. A. Ryabushkin, and S. V. Polyakov
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The electrical conductivity of polycrystalline SnO2(Cu) films and their sensitivity to hydrogen sulfide
B. A. Akimov, A. V. Albul, A. M. Gas'kov, V. Yu. Il'in, M. N. Rumyantseva, L. I. Ryabova, and M. Labeau
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Characteristic features of the accumulation of vacancy- and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents
I. I. Kolkovskii and V. V. Luk'yanitsa
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Solid solution InxGa1 ��� xAsySbzP1 ��� y ��� z: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy
N. A. Charykov, A. M. Litvak, M. P. Mikhailova, K. D. Moiseev, and Yu. P. Yakovlev
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Interband magnetooptic absorption line shape in bismuth
S. V. Brovko, A. A. Zaitsev, K. G. Ivanov, and O. V. Kondakov
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Intense photoluminescence of porous layers of SiC films grown on silicon substrates
A. M. Danishevskii, V. B. Shuman, E. G. Guk, and A. Yu. Rogachev
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Injection enhancement of photocurrent in polycrystalline silicon p+���n���n+ structures
R. Aliev
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Particle scattering times on one-dimensional potential barriers
N. L. Chuprikov
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Transverse stability of an impact-ionization front in a Si p+ ��� n ��� n+ structure
A. M. Minarskii and P. B. Rodin
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Deep level transient spectroscopy under conditions of current-carrier exchange between two allowed bands
A. A. Lebedev
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Effect of inhomogeneities of Bi2T3 crystals on the transverse Nernst���Ettingshausen effect
M. K. Zhitinskaya, S. A. Nemov, and T. E. Svechnikova
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Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation
A. M. Georgievskii, V. A. Solov'ev, B. S. Ryvkin, N. A. Strugov, E. Yu. Kotel'nikov, V. E. Tokranov, and A. Ya. Shik
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Electron localization in sound absorption oscillations in the quantum Hall effect regime
I. L. Drichko, A. M. D'yakonov, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov
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Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells
A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev
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Hall effect on inertial electrons in semiconductors
V. I. Kadushkin
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Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask
L. B. Pro�kt, M. A. Kaliteevskii, V. B. Kantor, D. A. Piotrovskii,, M. A. Sinitsyn, and B. S. Yavich
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Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06
T. Yu. Allen, T. A. Polyanskaya, A. A. Kopylov, and A. A. Shakmaev
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Propagation of a surface acoustic wave in a layered system containing a two-dimensional conducting layer
V. D. Kagan
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Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, S. V. Zaitsev, N. Yu. Gordeev, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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Neutron-activation analysis of the impurity composition of gallium arsenide based semiconductor structures
A. G. Dutov, V. A. Komar, S. V. Shiryaev, and L. A. Smakhtin
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Effect of laser radiation on the electronic density of states of an interface
L. N. Vozmilova, V. I. Gaman, V. M. Kalygina, A. V. Panin, and T. P. Smirnova
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Radiative cooling under the conditions of magnetoconcentration
A. I. Liptuga, V. K. Malyutenko, V. I. Pipa, and L. V. Levash
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Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n ��� n+-GaAs structures (M=Pt, Cr, W)
I. B. Ermolovich, V. V. Milenin, R. V. Konakova, L. N. Primenko, I. V. Prokopenko, and V. L. Gromashevskii
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Transitory switching-on of microplasmas at subthreshold voltages
V. N. Dobrovol'skii, I. E. Pal'tsev, and A. V. Romanov
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