| dc.description | Semiconductors -- May 1997
Volume 31, Issue 5, pp. 433-542
Threshold effect of local pulsed laser irradiation on the surface state of oxide layers deposited on real germanium surfaces
S. V. Vintsents, S. G. Dmitriev, R. A. Zakharov, and G. S. Plotnikov
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Effect of manganese on radiation degradation of the electric and recombination parameters of a silicon single crystal
F. M. Talipov
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Faraday rotation angle anisotropy in a Fe-based diluted magnetic semiconductor
S. V. Mel'nichuk, O. S. Mel'nichuk, A. I. Savchuk, and D. N. Trifonenko
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Photoelectric and radiation characteristics of silicon solar cells at high illumination levels and elevated temperatures
M. Ya. Bakirov
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Distribution of a shallow donor impurity in a p-type CdTe wafer annealed in Cd vapors
V. N. Babentsov, Z. K. Vlasenko, A. I. Vlasenko, and A. V. Lyubchenko
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Charge-carrier exclusion in InAs
S. S. Bolgov, V. K. Malyutenko, and A. P. Savchenko
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Nature of hole localization centers in sodium-doped lead chalcogenides
G. T. Alekseeva, E. A. Gurieva, P. P. Konstantinov, L. V. Prokof'eva, and Yu. I. Ravich
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Effect of fast-neutron irradiation on the photoluminescence of n-type GaAs(Te) crystals
K. D. Glinchuk and A. V. Prokhorovich
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On the relaxational characteristics and stability of a Si:H films grown at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and V. Kh. Kudoyarova
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The properties of low-threshold heterolasers with clusters of quantum dots
S. V. Zaitsev, N. Yu. Gordeev, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (167 kB)
Deep vacancy levels in (AlAs)1(GaAs)3 superlattices
S. N. Grinyaev and G. F. Karavaev
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Infrared absorption in porous silicon obtained in electrolytes containing ethanol
A. A. Kopylov and A. N. Kholodilov
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Inelastic electron scattering in strongly doped Bi0.88Sb0.12
S. A. Aliev, A. A. Movsum-zade, and S. S. Ragimov
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Photoelectric effect in GaAs-based surface-barrier structures: Temperature dependence of the short-wavelength quantum efficiency
Yu. A. Gol'dberg, O. V. Konstantinov, O. I. Obolenskii, E. A. Posse, and B. V. Tsarenkov
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Contact phenomena in two-dimensional electronic systems
V. B. Shikin and N. I. Shikina
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Exchange energy of a free electron in a semiconductor
O. V. Konstantinov, O. I. Obolenskii, and B. V. Tsarenkov
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Electron transport under Wannier���Stark localization conditions in silicon carbide polytypes
V. I. Sankin and I. A. Stolichnov
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Low-frequency Hall conductance of a semi-infinite two-dimensional system
V. B. Shikin
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Electrical properties of the solid solutions p-type GaAs1 ��� xSbx doped with germanium
T. Yu. Allen and T. A. Polyanskaya
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Photoluminescence in porous silicon produced as a result of intense laser excitation
E. Shatkovskii and Ya. Vertsinskii
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The Schottky barrier at a junction between a metal and silicon carbide
S. Yu. Davydov, A. A. Lebedev, and S. K. Tikhonov
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Polarization anisotropy of optical interband transitions in strained InGaAs/GaAs quantum wires
S. A. Gurevich, D. A. Zakheim, and S. A. Solov'ev
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Photoresponse of CdxHg1 ��� xTe crystals due to composition inhomogeneities
I. S. Virt and D. I. Tsyutsyura
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Transient space-charge-limited current in porous silicon
L. P. Kazakova, A. A. Lebedev, and �. A. Lebedev
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Effect of transverse pump current nonuniformity and field distribution on the dynamical characteristics of strip injection lasers
S. A. Gurevich, G. S. Simin, and M. S. Shatalov
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Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system
A. S. Zubrilov, Yu. V. Mel'nik, D. V. Tsvetkov, V. E. Bugrov, A. E. Nikolaev, S. I. Stepanov, and V. A. Dmitriev
Full Text: PDF (396 kB)
Mechanism of multivalued electrical conductivity anisotropy in double heterostructure wells and superlattices
Z. S. Gribnikov
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Positive magnetoresistance in films of the ferromagnetic semiconductor Eu1 ��� xSmxO
V. F. Kabanov and A. M. Sverdlova
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Photoacoustic spectroscopy of porous silicon
A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe
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Exciton scattering by concentration fluctuations and projection of the spins of magnetic impurities in quantum wells in semimagnetic semiconductors
A. V. Vertsimakha and V. I. Sugakov
Full Text: PDF (115 kB)
Optical absorption edge and its modification due to the decomposition of cadmium telluride and cadmium sulfide solid solution films
A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin
Full Text: PDF (62 kB) | en |
