| dc.description | Semiconductors -- June 1997
Volume 31, Issue 6, pp. 545-649
Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates
V. I. Kozlovskii, A. S. Artemov, Yu. V. Korostelin, A. B. Krysa, P. V. Shapkin, P. A. Trubenko, E. M. Dianov, and E. A. Shcherbakov
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Mesoscopic effects in the hopping conductivity region of macroscopic quasi-two-dimensional systems
B. A. Aronzon, A. S. Vedeneev, and V. V. Ryl'kov
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Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures
I. A. Andreev, E. V. Kunitsyna, V. M. Lantratov, T. V. L'vova, M. P. Mikhailova, and Yu. P. Yakovlev
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Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation
N. L. Bazhenov, G. G. Zegrya, M. P. Mikhailova, K. D. Moiseev, V. A. Smirnov,, O. Yu. Solov'eva, and Yu. P. Yakovlev
Full Text: PDF (79 kB)
Influence of charge carriers on tuning in InAsSb lasers
T. N. Danilova, O. I. Evseenko, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov,, V. V. Sherstnev, and Yu. P. Yakovlev
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Depolarization and photoionization effects in quantum wells
A. G. Petrov and A. Ya. Shik
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Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov,, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov,, V. M. Ustinov, A. F. Tsatsul'nikov, Zh. I. Alferov, J. B�_hrer, and D. Bimberg
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Formation of carrier generation centers in pure Si upon interaction with fast ions
A. M. Ivanov and N. B. Strokan
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Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals
I. G. Kuleev and G. L. Shtrapenin
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Drift-induced production of concentration gratings in an electron-hole plasma in a high-frequency electric field
V. L. Borblik
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Thermal-gradient concentration in a bipolar semiconductor with phonon drag of charge carriers
A. M. Konin
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Light-emitting diodes based on a metal-insulator-semiconductor structure
V. B. Katok, M. I. Panfilov, and G. E. Chaika
Full Text: PDF (51 kB)
Recombination model of the diffusion of zinc in GaAs
N. N. Grigor'ev and T. A. Kudykina
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Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov
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Influence of impurity germanium on the properties of sulfur centers in silicon
M. S. Yunusov, M. Karimov, B. L. Oksengendler, and A. Yusupov
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Possibility of enhancing a photorefractive hologram using negative differential conductivity
Yu. V. Miklyaev
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Dielectric constant and ac conductivity of semi-insulating Cd1 ��� xMnxTe semiconductors
P. W. Zukowski, A. Rodzik, and Yu. A. Shostak
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Anomalous distribution of iron atoms following the simultaneous implantation of Co+ and Fe+ ions in silicon
G. G. Gumarov, V. Yu. Petukhov, V. A. Zhikharev, V. A. Shustov, and I. B. Khaibullin
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Features of radiation-induced defect formation in p-type Si
M. S. Yunusov, M. Karimov, M. Alikulov, A. Akhmadaliev, B. L. Oksengendler, and S. S. Sabirov
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Schottky barrier breakdown in Si stimulated by exciton drift in a nonuniform electric field at 4.2 K
A. M. Musaev
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Influence of ytterbium on radiation-induced defect formation in silicon
F. M. Talipov
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Photoluminescence of SiO2 layers implanted with Si+ ions and annealed in a pulsed regime
G. A. Kachurin, I. E. Tyschenko, K. S. Zhuravlev, N. A. Pazdnikov, V. A. Volodin, A. K. Gutakovskii, A. F. Leier, W. Skorupa, and R. A. Yankov
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Quantum efficiency of Schottky photodiodes near the long-wavelength edge
V. G. Ivanov, V. I. Panasenkov, and G. V. Ivanov
Full Text: PDF (112 kB)
The photoconductivity of CdxHg1 ��� xTe (x = 0.2 ��� 0.3) with an aluminum thin-film coating
�. Yu. Salaev, �. K. Guseinov, N. D. Ismailov, and Atesh Tezer
Full Text: PDF (117 kB)
Temperature dependence of the photoluminescence of porous silicon
P. K. Kashkarov, E. A. Konstantinova, S. A. Petrova, V. Yu. Timoshenko, and A. �. Yunovich
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Use of a low-temperature emitter in investigating the spectral characteristics of infrared photodetectors
V. V. Vasil'ev, Yu. P. Mashukov, and V. N. Ovsyuk
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Laser-stimulated displacement of the p ��� n junction boundary in direct-gap GaAsP structures
G. A. Sukach
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Capacitive Methods of Semiconductor Purity Control
L. S. Berman
Full Text: PDF (15 kB) | en |
