| dc.description | Semiconductors -- August 1997
Volume 31, Issue 8, pp. 763-874
Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, M. A. Sipovskaya, and Yu. P. Yakovlev
Full Text: PDF (90 kB)
Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams
G. �. Tsyrlin, V. N. Petrov, V. G. Dubrovskii, N. K. Polyakov, S. Ya. Tipisev, A. O. Golubok, and N. N. Ledentsov
Full Text: PDF (3492 kB)
Two sources of excitation of photoluminescence of porous silicon
N. E. Korsunskaya, T. V. Torchinskaya, B. R. Dzhumaev, L. Yu. Khomenkova, and B. M. Bulakh
Full Text: PDF (69 kB)
Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy
G. �. Tsyrlin, V. N. Petrov, M. V. Maksimov, and N. N. Ledentsov
Full Text: PDF (135 kB)
Hall effect in quasi-two-dimensional superlattices in nonquantizing magnetic and strong electric fields
G. M. Shmelev, �. M. �pshtein, and I. I. Maglevannyi
Full Text: PDF (104 kB)
Nonstationary thermoelectric power in multilayered structures with p���n junctions
V. N. Agarev
Full Text: PDF (65 kB)
Si/Si1 ��� xGex epitaxial layers and superlattices. Growth and structural characteristics
F. F. Sizov, V. P. Klad'ko, S. V. Plyatsko, A. P. Shevlyakov, Yu. N. Kozyrev, and V. M. Ogenko
Full Text: PDF (92 kB)
Simple method for reconstructing the doping fine structure in semiconductors from C ��� V measurements in an electrolytic cell
V. I. Shashkin, I. R. Karetnikova, A. V. Murel', I. M. Nefedov, and I. A. Shereshevskii
Full Text: PDF (95 kB)
Effect of pulsed laser irradiation on the optical characteristics and photoconductivity of the solid solutions CdHgTe
L. A. Golovan', P. K. Kashkarov, V. Yu. Timoshenko, and V. M. Lakeenkov
Full Text: PDF (89 kB)
Effect of an electric field on the relaxation of photoconductivity in n-Hg0.8Cd0.2Te crystals
I. S. Virt
Full Text: PDF (86 kB)
Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells
M. V. Maksimov, I. L. Krestnikov, S. V. Ivanov, N. N. Ledentsov, and S. V. Sorokin
Full Text: PDF (186 kB)
Calculation of the trapping of hot electrons by repulsive centers under the conditions of a needle-type distribution function
Kh. Z. Kachlishvili, Z. S. Kachlishvili, and F. G. Chumburidze
Full Text: PDF (67 kB)
Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt
A. E. Kunitsyn, V. V. Chaldyshev, A. G. Mil'vidskaya, and M. G. Mil'vidskii
Full Text: PDF (59 kB)
Dependence of the resonant conductivity of symmetric double-barrier structures on the amplitude of rf field
E. I. Golant and A. B. Pashkovskii
Full Text: PDF (95 kB)
Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight
K. M. Doshchanov
Full Text: PDF (67 kB)
Total external x-ray reflection and infrared spectroscopy study of porous silicon and its aging
L.A. Balagurov, V.F. Pavlov, E.A. Petrova, and G.P. Boronina
Full Text: PDF (78 kB)
Calculation of 2p levels for thermal double donors in silicon
L. F. Makarenko
Full Text: PDF (84 kB)
Conductivity stimulated by temperature oscillations in dissociated cadmium telluride and cadmium sulfide solid solutions
A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin
Full Text: PDF (74 kB)
Intrinsic photoconductivity in chromium disilicide epitaxial thin films
N. G. Galkin, A. V. Konchenko, and A. M. Maslov
Full Text: PDF (61 kB)
Enhancement of the photovoltaic effect in a two-dimensionally disordered medium
M. V. �ntin
Full Text: PDF (78 kB)
InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3���4 ��m
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. H. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (75 kB)
Electron-probe microanalysis of doped PbTe and Pb0.8Sn0.2Te single crystals
M. V. Bestaev, A. I. Gorelik, V. A. Moshnikov, and Yu. M. Tairov
Full Text: PDF (5932 kB)
Steady-state lux-ampere characteristics of compensated crystals at various excitation intensities
A. A. Lebedev
Full Text: PDF (99 kB)
Evolution of static negative differential conductivity in Ga1 ��� xAlxAs as a function of the transverse magnetic field and the composition of the solid solution
G. �. Dzamukashvili, Z. S. Kachlishvili, and N. K. Metreveli
Full Text: PDF (104 kB)
Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power
Yu. B. Grekov, T. A. Shlyakhov, and N. A. Semikolenova
Full Text: PDF (61 kB)
Nature of Ec ��� 0.37 eV centers and the formation of high-resistivity layers in n-type silicon
O. V. Naumova, L. S. Smirnov, and V. F. Stas'
Full Text: PDF (116 kB)
Formation of oxygen precipitates in silicon
I. V. Antonova, V. P. Popov, S. S. Shaimeev, and A. Misiuk
Full Text: PDF (87 kB)
Transient photoelectric effect in pure, high-resistivity, highly biased metal-semiconductor and metal-insulator-semiconductor structures
B. I. Reznikov
Full Text: PDF (143 kB)
Injection currents in mixed-layer Ga0.5In1.5S3 single crystals
I. M. Askerov and F. Yu. Asadov
Full Text: PDF (55 kB)
Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals
G. E. Davidyuk, N. S. Bogdanyuk, A. P. Shavarova, and A. A. Fedonyuk
Full Text: PDF (80 kB)
Acceptors in Cd1 ��� xMnxTe (x < 0.1)
A. I. Vlasenko, V. N. Babentsov, Z. K. Vlasenko, S. V. Svechnikov, I. M. Rarenko, Z. I. Zakharuk, E. S. Nikonyuk, and V. L. Shlyakhovyi
Full Text: PDF (103 kB)
Energy spectrum of n-type Pb1 ��� xSnxTe (x = 0.22) bombarded by neutrons
E. P. Skipetrov, A. N. Nekrasova, and A. V. Ryazanov
Full Text: PDF (78 kB) | en |
