| dc.description | Semiconductors -- May 1998
Volume 32, Issue 5, pp. 457-571
Nanometer-size atomic clusters in semiconductors���a new approach to tailoring material properties
M. G. Mil'vidskii and V. V. Chaldyshev
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How the type of bombarding ion affects the formation of radiation defects in silicon
M. Yu. Barabanenko, A. V. Leonov, V. N. Mordkovich, and N. M. Omel'yanovskaya
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Creation of vicinal facets on the surface of gallium arsenide with orientations close to (100) under conditions of nonequilibrium mass transfer
M. V. Baizer, V. Yu. Vitukhin, I. V. Zakurdaev, and A. I. Rudenko
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A quantum-well model and the optical absorption edge in structurally nonuniform a-Si:H-based alloys
B. G. Budagyan, A. A. Aivazov, D. A. Stryakhilev, and E. M. Sokolov
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Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs
I. L. Bronevoi and A. N. Krivonosov
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Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs
I. L. Bronevoi and A. N. Krivonosov
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Distinctive features of the far-infrared reflection spectra of the semimagnetic semiconductors Hg1 ��� xMnxTe1 ��� ySey
A. I. Belogorokhov, V. A. Kul'bachinskii, P. D. Mar'yanchuk, and I. A. Churilov
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Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS : Mn films
Ya. F. Kononets, L. I. Veligura, and O. A. Ostroukhova
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Natural nonuniformities in the height of a Schottky barrier
V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, and V. V. Korablev
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Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and G. Biskupski
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Hopping-induced energy relaxation with allowance for all possible versions of intercenter transitions
A. A. Kiselev
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Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals
F. M. Vorobkalo, K. D. Glinchuk, and A. V. Prokhorovich
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Differential resistance of Au/GaAs1 ��� xSbx tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs1 ��� xSbx
T. A. Polyanskaya, T. Yu. Allen, Kh. G. Nazhmudinov, S. G. Yastrebov, and I. G. Savel'ev
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Differential resistance of Au/GaAs1 ��� xSbx tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs1 ��� xSbx
T. A. Polyanskaya, T. Yu. Allen, Kh. G. Nazhmudinov, and I. G. Savel'ev
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Binding energy of exciton-impurity complexes in semiconductors with diamond and zinc blende structure
S. M. Zubkova, E. I. Shul'zinger, and E. V. Smelyanskaya
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Heterojunction based on semiconductors with the chain structure TlSe���TlInSe2
I. V. Alekseev
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Mechanism of anodic electroluminescence of porous silicon in electrolytes
D. N. Goryachev, L. V. Belyakov, O. M. Sreseli, and G. Polisskii
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Transport properties of magnetoexcitons in coupled quantum wells
Yu. E. Lozovik and A. M. Ruvinskii
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Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier
V. G. Popov, Yu. V. Dubrovskii, Yu. N. Khanin, E. E. Vdovin, D. K. Maude, J.-C. Portal, T. G. Andersson, and J. Thordson
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Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1 ��� xAs superlattice with doped quantum wells
S. I. Borisenko and G. F. Karavaev
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Investigation of the photovoltage in por-Si/p-Si structures by the pulsed-photovoltage method
V. Yu. Timoshenko, E. A. Konstantinova, and T. Dittrich
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Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p���i���n structures based on them
M. M. Mezdrogina, A. V. Abramov, G. N. Mosina, I. N. Trapeznikova, and A. V. Patsekin
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Nonmonotonic character of the growth-temperature dependence of the resistance of polycrystalline silicon films
D. V. Shengurov, D. A. Pavlov, V. N. Shabanov, V. G. Shengurov, and A. F. Khokhlov
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Characteristic features of the IR spectra of amorphous boron-doped hydrated silicon
I. A. Kurova, L. I. Belogorokhova, and A. I. Belogorokhov
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Charge-carrier exclusion and accumulation intensified by ohmic contacts
V. K. Malyutenko, G. I. Teslenko, and V. V. Vainberg
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