dc.description | Semiconductors -- December 1997
Volume 31, Issue 12, pp. 1217-1283
Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
N. N. Dymova, A. E. Kunitsyn, V. V. Chaldyshev, and A. V. Markov
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Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching
T. Ya. Gorbach, S. V. Svechnikov, P. S. Smertenko, P. G. Tul'chinskii, A. V. Bondarenko, S. A. Volchek, A. M. Dorofeev, G. Masini, G. Maiello, S. La Monica, and A. Ferrari
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Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data
A. N. Veis
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Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum
A. M. Agal'tsov, V. S. Gorelik, and I. A. Rakhmatullaev
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Photoconductivity of sulfur-doped silicon near 10.6 ��m
Kh. B. Siyabekov and V. T. Tulanov
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Effect of different types of surface treatment on the photoelectric and optical properties of CdTe
A. Baidullaeva, A. I. Vlasenko, and P. E. Mozol'
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Properties of p-PbTe (Ga) based diode structures
B. A. Akimov, E. V. Bogdanov, V. A. Bogoyavlenskii, L. I. Ryabova, and V. I. Shtanov
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Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma
K. S. Zhuravlev, V. A. Kolosanov, I. I. Marahovka, and M. Holland
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Photoluminescence of localized exitons in coherently strained ZnS���ZnSe/GaAs(001) quantum wells
V. V. Tishchenko, N. V. Bondar, M. S. Brodyn, and A. V. Kovalenko
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Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures
S. I. Pokutnii
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Metastability and relaxation processes in hydrogenated amorphous silicon
B. G. Budaguan, A. A. Aivazov, M. N. Meitin, A. Yu. Sazonov, A. E. Berdnikov, and A. A. Popov
Full Text: PDF (109 kB)
Light-induced processes in a-Si:H films at elevated temperatures
I. A. Kurova, �. V. Larina, N. N. Ormont, and D. V. Senashenko
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Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states
B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, V. V. Ryl'kov, and V. E. Sizov
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Kinetics of ion depolarization of Si���MOS structures in the linear voltage sweep regime
A. G. Zhdan, E. I. Goldman, and G. V. Chucheva
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Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations
L. E. Vorob'ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and V. N. Tulupenko
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Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields
L. E. Vorob'ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and V. N. Tulupenko
Full Text: PDF (131 kB) | en |