| dc.description | Semiconductors -- January 1998
Volume 32, Issue 1, pp. 1-115
The history and future of semiconductor heterostructures
Zh. I. Alferov
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Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon
O. V. Aleksandrov and N. N. Afonin
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High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret'yakov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
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Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation
V. N. Babentsov and N. I. Tarbaev
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Filling of dislocation levels in strong electric fields
Z. A. Veliev
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Influence of the intensity of gamma irradiation on the photoluminescence of GaAs:Te
V. I. Dubovik, V. A. Bogdanova, N. A. Davletkil'deev, N. A. Semikolenova, and O. A. Shutyak
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Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): results of a photoluminescence study with polarized resonant excitation
A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, T. Piotrowski, and J. Pultorak
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Intrinsic defect states in PbTe single-crystal films grown by laser-modulated epitaxy
S. V. Plyatsko
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Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt
K. S. Zhuravlev, T. S. Shamirzaev, and N. A. Yakusheva
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Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 ��� xMnxTe1 ��� ySey
V. A. Kulbachinskii, I. A. Churilov, P. D. Maryanchuk, and R. A. Lunin
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On C ��� V profiling near an isotypic heterojunction
V. I. Zubkov, M. A. Melnik, and A. V. Solomonov
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Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures
A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin, and A. �. Yunovich
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Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact
S. Yu. Davydov, A. A. Lebedev, and S. K. Tikhonov
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Photoelectric properties of n-CdS/p-InP heterojunctions
V. M. Botnaryuk, L. V. Gorchak, I. I. Diaconu, V. Yu. Rud', and Yu. V. Rud'
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Photoelectric properties of structures based on TlInS2 single crystals
S. Iida, N. Mamedov, V. Yu. Rud', and Yu. V. Rud'
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Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects
N. I. Bochkareva and A. V. Klochkov
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Commensurate and incommensurate indium phases on a (111)A InAs surface
Yu. G. Galitsyn, V. G. Mansurov, I. I. Marahovka, and I. P. Petrenko
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Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Chao Chen, P. S. Kop'ev, Zh. I. Alf�rov, V. N. Petrov, G. �. Tsirlin, and D. Bimberg
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Exciton polaritons in long-period quantum-well structures
M. R. Vladimirova, E. L. Ivchenko, and A. V. Kavokin
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Interimpurity light absorption in thin wires of III���V-type semiconductors
A. P. Dzhotyan, �. M. Kazaryan, and A. S. Chirkinyan
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Characterization of GaAs/InxGa1 ��� xAs quantum-dot heterostructures by electrical and optical methods
V. Ya. Aleshkin, D. M. Gaponova, S. A. Gusev, V. M. Danil'tsev, Z. F. Krasil'nik, A. V. Murel, L. V. Paramonov, D. G. Revin, O. I. Khrykin, and V. I. Shashkin
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Relaxation of light-induced metastable state of boron-doped p-type a-Si:H
A. G. Kazanskii and E. V. Larina
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Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure
G. J. Adriaenssens, W. Grevendonk, and O. A. Golikova
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Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure
A. A. Beloushkin, Yu. A. Efimov, A. S. Ignat'ev, A. L. Karuzskii, V. N. Murzin, A. V. Perestoronin, G. K. Rasulova, A. M. Tskhovrebov, and E. G. Chizhevskii
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