| dc.description | Semiconductors -- February 1998
Volume 32, Issue 2, pp. 117-229
Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types
L. A. Kazakevich and P. F. Lugakov
Full Text: PDF (69 kB)
Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation
L. I. Khirunenko, V. I. Shakhovtsov, and V. V. Shumov
Full Text: PDF (76 kB)
Diffusion doping of undoped hydrogenated amorphous silicon with tin
G. S. Kulikov and K. Kh. Khodzhaev
Full Text: PDF (30 kB)
Ultrashallow p+-n junctions in silicon (100): electron-beam diagnostics of the surface zone
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, and L. E. Klyachkin
Full Text: PDF (159 kB)
Exciton characteristics of intercalated TlGaSe2 single crystal
S. N. Mustafaeva, E. M. Kerimova, and N. Z. Gasanov
Full Text: PDF (54 kB)
Deformation potentials of the Gamma(000) band extrema in CdGa2S4
T. G. Kerimova, Sh. S. Mamedov, and I. A. Mamedova
Full Text: PDF (98 kB)
Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices
A. S. Ablitsova, V. F. Agekyan, and A. Yu. Serov
Full Text: PDF (82 kB)
Excited states of chalcogen ions in germanium
A. Yu. Ushakov, R. M. Shterengas, L. M. Shterengas, and N. B. Radchuk
Full Text: PDF (73 kB)
Self-compensation in CdTe in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor
O. A. Matveev and A. I. Terent'ev
Full Text: PDF (92 kB)
Negative dynamic differential conductivity at the cyclotron frequency in Ga1 ��� xAlxAs under conditions of ballistic intervalley electron transfer
G. �. Dzamukashvili, Z. S. Kachlishvili, and N. K. Metreveli
Full Text: PDF (174 kB)
The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence
G. N. Ivanova, V. A. Kasiyan, D. D. Nedeoglo, and S. V. Oprya
Full Text: PDF (106 kB)
The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence
G. N. Ivanova, V. A. Kasiyan, N. D. Nedeoglo, D. D. Nedeoglo, and A. V. Simashkevich
Full Text: PDF (74 kB)
Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers
I. A. Karpovich and M. V. Stepikhova
Full Text: PDF (115 kB)
Transient current in amorphous, porous semiconductor���crystalline semiconductor structures
L. P. Kazakova and �. A. Lebedev
Full Text: PDF (110 kB)
Current���voltage characteristics of Si:B blocked impurity���band structures under conditions of hopping-transport-limited photoresponse
B. A. Aronzon, D. Yu. Kovalev, A. M. Kozlov, J. Leotin, and V. V. Ryl'kov
Full Text: PDF (141 kB)
Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes
Yu. A. Goldberg and E. A. Posse
Full Text: PDF (60 kB)
Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels
B. I. Reznikov
Full Text: PDF (117 kB)
Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
Full Text: PDF (109 kB)
Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rosov, and Yu. P. Yakovlev
Full Text: PDF (113 kB)
Interband absorption of long-wavelength radiation in delta-doped superlattices based on single-crystal wide-gap semiconductors
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
Full Text: PDF (115 kB)
Lateral traveling wave as a type of transient process in a resonant-tunneling structure
D. V. Mel'nikov and A. I. Podlivaev
Full Text: PDF (142 kB)
The structure of porous gallium phosphide
T. N. Zavaritskaya, A. V. Kvit, N. N. Mel'nik, and V. A. Karavanskii
Full Text: PDF (406 kB)
InAsSbP double-heterostructure lasers for the spectral range 2.7���3.0 ��m (T = 77 K)
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (94 kB)
Gamma-induced metastable states of doped, amorphous, hydrated silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
Full Text: PDF (72 kB)
Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate
A. S. Kyuregyan and S. N. Yurkov
Full Text: PDF (140 kB) | en |
