Show simple item record

dc.contributor.editorEditor of work here.en_US
dc.contributor.otherPreservation Department, Stony Brook University Libraries.en_US
dc.contributor.otherCataloging & Metadata Department, Stony Brook University Libraries.en_US
dc.date.accessioned2007-06-11T18:50:39Z
dc.date.accessioned2015-04-24T14:42:11Z
dc.date.available2007-06-11T18:50:39Z
dc.date.available2015-04-24T14:42:11Z
dc.date.issued1998-02en_US
dc.identifier.urihttp://hdl.handle.net/1951/41385
dc.identifier.urihttp://hdl.handle.net/11401/70132
dc.descriptionleave(s) : ill; 28 cm.en_US
dc.descriptionSemiconductors -- February 1998 Volume 32, Issue 2, pp. 117-229 Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types L. A. Kazakevich and P. F. Lugakov Full Text: PDF (69 kB) Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation L. I. Khirunenko, V. I. Shakhovtsov, and V. V. Shumov Full Text: PDF (76 kB) Diffusion doping of undoped hydrogenated amorphous silicon with tin G. S. Kulikov and K. Kh. Khodzhaev Full Text: PDF (30 kB) Ultrashallow p+-n junctions in silicon (100): electron-beam diagnostics of the surface zone A. N. Andronov, S. V. Robozerov, N. T. Bagraev, and L. E. Klyachkin Full Text: PDF (159 kB) Exciton characteristics of intercalated TlGaSe2 single crystal S. N. Mustafaeva, E. M. Kerimova, and N. Z. Gasanov Full Text: PDF (54 kB) Deformation potentials of the Gamma(000) band extrema in CdGa2S4 T. G. Kerimova, Sh. S. Mamedov, and I. A. Mamedova Full Text: PDF (98 kB) Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices A. S. Ablitsova, V. F. Agekyan, and A. Yu. Serov Full Text: PDF (82 kB) Excited states of chalcogen ions in germanium A. Yu. Ushakov, R. M. Shterengas, L. M. Shterengas, and N. B. Radchuk Full Text: PDF (73 kB) Self-compensation in CdTe in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor O. A. Matveev and A. I. Terent'ev Full Text: PDF (92 kB) Negative dynamic differential conductivity at the cyclotron frequency in Ga1 ��� xAlxAs under conditions of ballistic intervalley electron transfer G. �. Dzamukashvili, Z. S. Kachlishvili, and N. K. Metreveli Full Text: PDF (174 kB) The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence G. N. Ivanova, V. A. Kasiyan, D. D. Nedeoglo, and S. V. Oprya Full Text: PDF (106 kB) The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence G. N. Ivanova, V. A. Kasiyan, N. D. Nedeoglo, D. D. Nedeoglo, and A. V. Simashkevich Full Text: PDF (74 kB) Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers I. A. Karpovich and M. V. Stepikhova Full Text: PDF (115 kB) Transient current in amorphous, porous semiconductor���crystalline semiconductor structures L. P. Kazakova and �. A. Lebedev Full Text: PDF (110 kB) Current���voltage characteristics of Si:B blocked impurity���band structures under conditions of hopping-transport-limited photoresponse B. A. Aronzon, D. Yu. Kovalev, A. M. Kozlov, J. Leotin, and V. V. Ryl'kov Full Text: PDF (141 kB) Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes Yu. A. Goldberg and E. A. Posse Full Text: PDF (60 kB) Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels B. I. Reznikov Full Text: PDF (117 kB) Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov Full Text: PDF (109 kB) Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rosov, and Yu. P. Yakovlev Full Text: PDF (113 kB) Interband absorption of long-wavelength radiation in delta-doped superlattices based on single-crystal wide-gap semiconductors V. V. Osipov, A. Yu. Selyakov, and M. Foygel Full Text: PDF (115 kB) Lateral traveling wave as a type of transient process in a resonant-tunneling structure D. V. Mel'nikov and A. I. Podlivaev Full Text: PDF (142 kB) The structure of porous gallium phosphide T. N. Zavaritskaya, A. V. Kvit, N. N. Mel'nik, and V. A. Karavanskii Full Text: PDF (406 kB) InAsSbP double-heterostructure lasers for the spectral range 2.7���3.0 ��m (T = 77 K) T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (94 kB) Gamma-induced metastable states of doped, amorphous, hydrated silicon M. S. Ablova, G. S. Kulikov, and S. K. Persheev Full Text: PDF (72 kB) Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate A. S. Kyuregyan and S. N. Yurkov Full Text: PDF (140 kB)en
dc.formatMonograph.en_US
dc.format.extent2422588 bytes
dc.format.extent6456 bytes
dc.format.mediumElectronic Resource.en_US
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK ���Nauka/Interperiodica��.en
dc.publisherStony Brook University.en_US
dc.relation.ispartofseriesV. 32en
dc.relation.ispartofseriesI. 02en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 32, I. 02en
dc.typeOther.en_US
dc.description.contributorThe content contained herein is maintained and curated by the Preservation Department.en_US
dc.description.contributorThis record is revised and maintained by the content administrators from the Cataloging & Metadata Department.en_US
dc.publisher.locationStony Brook, NY.en_US


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record