| dc.description | Semiconductors -- March 1998
Volume 32, Issue 3, pp. 231-342
Growth characteristics and physical properties of PbTe/BaF2 prepared under nonequilibrium conditions
S. V. Plyatsko
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On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons
V. P. Klad'ko and S. V. Plyatsko
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On the mechanisms of long-term relaxation of the conductivity in compensated Si and Si as a result of irradiation
M. S. Yunusov, M. Karimov, and B. L. Oksengendler
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Tin telluride based thermoelectrical alloys
V. P. Vedeneev, S. P. Krivoruchko, and E. P. Sabo
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Lock-in-phase analysis of n-GaAs photoreflectance spectra
A. V. Gansha, R. V. Kus'menko, W. Kircher, J. Schreiber, and S. Hildebrandt
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Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
T. I. Voronina, B. E. Dzhurtanov, T. S. Lagunova, M. A. Sipovskaya, V. V. Sherstnev, and Yu. P. Yakovlev
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Low-frequency noise in n-GaN
N. V. D'yakonova, M. E. Levinshtein, S. Contreras, W. Knap, B. Beaumont, and P. Gibart
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Equation of state of an electron gas and theory of the thermal voltage in a quantizing magnetic field
B. M. Askerov, M. M. Machmudov, and Kh. A. Gasanov
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Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity
A. N. Kabaldin, V. B. Neimash, V. M. Tsmots', and V. S. Shtym
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Role of light fluctuations in the appearance of the bistability of the photocarrier distribution
Yu. V. Gudyma and D. D. Nikirsa
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Laser-modulated epitaxy of lead telluride
S. V. Plyatsko
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Optical properties of crystals of the solid solutions (InSb)1 ��� x(CdTe)x
V. A. Brodovoi, N. G. Vyalyi, and L. M. Knorozok
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Effect of metastable states on the de-excitation of excitons in n-GaAs
V. V. Krivolapchuk and N. K. Poletaev
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Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region
S. A. Nemov, Yu. I. Ravich, V. I. Proshin, and T. G. Abaidulina
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Local neutrality and pinning of the chemical potential in III���V solid solutions: interfaces and radiation effects
V. N. Brudnyi and S. N. Grinyev
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Two- and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals
V. A. Pogrebnyak, D. D. Khalameida, V. M. Yakovenko, and I. M. Rarenko
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Preparation and photosensitivity of heterostructures based on anodized silicon carbide
A. A. Lebedev, A. A. Lebedev, V. Yu. Rud', and Yu. V. Rud'
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Properties of periodic alpha-Si:H/a-SiNx:H structures obtained by nitridization of amorphous-silicon layers
D. I. Bilenko, O. Ya. Belobrovaya, Yu. N. Galishnikova, �. A. Zharkova, N. P. Kazanova, O. Yu. Koldobanova, and E. I. Khasina
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Ionization of impurity centers in a semiconductor quantum superlattice by nonlinear electromagnetic waves
S. V. Kryuchkov and K. A. Popov
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Harmonics generation in quantum-size structures in a strong electromagnetic field
V. V. Kapaev and A. E. Tyurin
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Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon
O. A. Golikova
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Effect of ion irradiation of amorphous-silicon films on their crystallization
N. V. Bakhtina, A. I. Mashin, A. P. Pavlov, and E. A. Pitirimova
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Photosensitivity of porous silicon���layered III���VI semiconductors heterostructures
A. A. Lebedev, V. Yu. Rud', and Yu. V. Rud'
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Magnetic-resonance spectroscopy of porous quantum-size structures
A. I. Mamykin, V. A. Moshnikov, and A. Yu. Il'in
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Properties of p+���n structures with a buried layer of radiation-induced defects
A. M. Ivanov, N. B. Strokan, and V. B. Shuman
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Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination
S. V. Zaitsev and A. M. Georgievskii
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Current-voltage characteristics of GaN and AlGaN p���i���n diodes
N. I. Kuznetsov and K. G. Irvine
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Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev
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