| dc.description | Semiconductors -- October 1998
Volume 32, Issue 10, pp. 1029-1140
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing
V. M. Ardyshev and M. V. Ardyshev
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Equilibrium of native point defects in tin dioxide
K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov
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Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoconductivity of copper-compensated gallium phosphide
N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov
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Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
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Study of GaN thin layers subjected to high-temperature rapid thermal annealing
N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
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Nitrogen divacancies ��� the possible cause of the "yellow band" in the luminescence spectra of GaN
A. �. Yunovich
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A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko
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Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 ��� z)0.95Ge0.05Te
S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson
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Differential methods for determination of deep-level parameters from recombination currents of p���n junctions
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin
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Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields
V. N. Tulupenko
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Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors
P. G. Lukashevich
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment
V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud'
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Photoelectric properties of GaN/GaP heterostructures
V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud'
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Photoluminescence of the space charge region of metal���zinc selenide contacts
V. P. Makhnii and M. M. Sletov
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The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
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LOW-DIMENSIONAL SYSTEMS
Weak localization in p-type quantum wells
N. S. Averkiev, L. E. Golub, and G. E. Pikus
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Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main
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Electron-hole Coulomb interaction in InGaN quantum dots
V. E. Bugrov and O. V. Konstantinov
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Shallow acceptors in strained multiquantum-well Ge/Ge1 ��� xSix heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov
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Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier
Yu. Pozhela and K. Pozhela
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Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients
N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad
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Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Doping and impurity compensation by ion implantation in a-SiGe films
A. V. Ershov, A. I. Mashin, and A. F. Khokhlov
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Long-term structural relaxation and photoinduced degradation in a-Si : H
K. V. Kougia and A. B. Pevtsov
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Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon
K. V. Kougia, E. I. Terukov, and V. Fus
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Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin
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PHYSICS OF SEMICONDUCTOR DEVICES
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr
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