| dc.description | Semiconductors -- July 1999
Volume 33, Issue 7, pp. 707-819
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Influence of native defects on polytypism in SiC
A. A. Lebedev
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Antistructural defects in PbTe-type semiconductors
V. F. Masterov, S. I. Bondarevskii, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical properties of nuclear-doped indium antimonide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
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Study of the polarization photoluminescence of thick epitaxial GaN layers
Yu. V. Zhilyaev, V. V. Krivolapchuk, and I. N. Safronov
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Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
T. I. Voronina, T. S. Lagunova, K. D. Moiseev, A. E. Rozov, M. A. Sipovskaya, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Hubbard energy of two-electron tin centers in PbS1 ��� zTez solid solutions
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, and N. P. Seregin
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Investigation of MOVPE-grown GaN layers doped with As atoms
A. F. Tsatsul'nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alf�rov, and A. Hoffmann
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Photolectric effects in silicon switching structures utilizing rare-earth fluorides
V. A. Rozhkov and M. B. Shalimova
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Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures
V. Yu. Rud' and Yu. V. Rud'
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Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
I. V. Bodnar', V. F. Gremenok, V. Yu. Rud', and Yu. V. Rud'
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Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer
V. I. Kozlovskii,, A. B. Krysa, Yu. G. Sadof'ev, and A. G. Tur'yanskii
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Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light
B. I. Reznikov
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Heterojunctions utilizing CuInxGa1 ��� xTe2 thin films
V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. F. Gremenok, I. A. Viktorov, I. V. Bodnar', and D. D. Krivolap
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LOW-DIMENSIONAL SYSTEMS
Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields
�. P. Sinyavskii and S. M. Sokovnich
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Polar state of a particle with a degenerate band spectrum in a quantum dot
I. P. Ipatova, A. Yu. Maslov, and O. V. Proshina
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Transport and optical properties of tin delta-doped GaAs structures
V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, V. G. Mokerov, A. P. Senichkin, A. S. Bugaev, A. L. Karuzskii, A. V. Perestoronin, R. T. F. van Schaijk, and A. de Visser
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Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures
A. M. Georgievskii, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinskii, I. I. Novikov, and P. S. Kop'ev
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Electron-beam-induced conductivity in self-organized silicon quantum wells
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin, and A. M. Malyarenko
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Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov, D. A. Livshits, Z. N. Sokolova, I. S. Tarasov, and Zh. I. Alferov
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Photocapacitance relaxation in amorphous As2Se3 films
I. A. Vasiliev and S. D. Shutov
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Controlling the U���-center density in Se���As chalcogenide-glass semiconductors by doping with metals and halogens
L. P. Kazakova and K. D. Tsendin
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PHYSICS OF SEMICONDUCTOR DEVICES
Theory of photoresistors based on trapezoidal delta-doped superlattices
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
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A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p ��� n structures and Schottky diodes
Yu. A. Goldberg, O. V. Konstantinov, V. M. Lantratov, O. I. Obolensky, T. V. Petelina, E. A. Posse, and M. Z. Shvarts
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Fabrication of discrete p ��� n junctions separated by an insulating layer using direct wafer bonding
E. G. Guk, B. G. Podlaskin, N. A. Tokranova, V. B. Voronkov, and V. A. Kozlov
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Polarization selection in VCSELs due to current carrier heating
B. S. Ryvkin and A. M. Georgievskii
Full Text: PDF (116 kB) | en |
