| dc.description | Semiconductors -- January 1999
Volume 33, Issue 1, pp. 1-105
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0 ��� 1.6 ��m
V. Yu. Davydov, V. V. Lundin, A. N. Smirnov, N. A. Sobolev, A. S. Usikov, A. M. Emel'yanov, M. I. Makoviichuk, and E. O. Parshin
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Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures
B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, V. N. Vasil'kov, and E. I. Slyn'ko
Full Text: PDF (75 kB)
Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse
I. L. Bronevoi and A. N. Krivonosov
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Fano effect in the magnetoabsorption spectra of gallium arsenide
D. V. Vasilenko, N. V. Luk'yanova, and R. P. Seisyan
Full Text: PDF (99 kB)
Correlation between the material parameters and conditions for the excitation of recombination waves in Si<S>
M. K. Bakhadyrkhanov, U. Kh. Kurbanova, and N. F. Zikrillaev
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Self-compensation in PbSe:Tl thin films
V. A. Zykov, T. A. Gavrikova, S. A. Nemov, and P. A. Osipov
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Electronic structure of C60 films
V. V. Sobolev and E. L. Busypina
Full Text: PDF (104 kB)
Quasi-gapless semiconductor: p-type indium arsenide
M. I. Daunov, I. K. Kamilov, A. B. Magomedov, and A. Sh. Kirakosyan
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Optical absorption in PbGa2Se4 single crystals
B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov
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Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}���SnGa(SiGa) complexes in GaAs produced as a result of resonant polarized excitation
A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov
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Photoconductivity spectra of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
Full Text: PDF (97 kB)
Theory of photovoltaic effects in crystals without an inversion center
R. Ya. Rasulov, Yu. E. Salenko, A. Tukhtamatov, T. �ski, and A. �. Avliyaev
Full Text: PDF (158 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Ultrashallow p+ ��� n junctions in Si(111): electron-beam diagnostics of the surface region
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. A. Andronov, and S. V. Robozerov
Full Text: PDF (130 kB)
Investigating the photosensitivity spectra of n-type GaAs���As2Se3 heterojunctions
I. P. Arzhanukhina, K. P. Kornev, and U. V. Seleznev
Full Text: PDF (67 kB)
LOW-DIMENSIONAL SYSTEMS
Charging of deep-level centers and negative persistent photoconductivity in modulation-doped AlGaAs/GaAs heterostructures
V. I. Borisov, V. A. Sablikov, I. V. Borisova, and A. I. Chmil'
Full Text: PDF (111 kB)
Conductivity of thin nanocrystalline silicon films
V. G. Golubev, L. E. Morozova, A. B. Pevtsov, and N. A. Feoktistov
Full Text: PDF (58 kB)
Vertical screening in doped, intentionally disordered semiconductor superlattices
I. P. Zvyagin and M. A. Ormont
Full Text: PDF (91 kB)
Optical intersubband transitions in strained quantum wells utilizing In1 ��� xGaxAs/InP solid solutions
S. A. Stoklitskii, V. N. Murzin, Yu. A. Mityagin, B. Monemar, and P. O. Holtz
Full Text: PDF (230 kB)
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
Zhao Zhen, D. A. Bedarev, B. V. Volovik, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, and P. S. Kop'ev
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Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field
�. P. Sinyavskii and A. M. Rusanov
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Radiative tunneling recombination and luminescence of trapezoidal delta-doped superlattices
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
Full Text: PDF (112 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Influence of thermal annealing on the intensity of the 1.54-��m photoluminescence band in erbium-doped amorphous hydrogenated silicon
A. A. Andreev, V. B. Voronkov, V. G. Golubev, A. V. Medvedev, and A. B. Pevtsov
Full Text: PDF (76 kB)
Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity
O. A. Golikova and M. M. Kazanin
Full Text: PDF (78 kB)
Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon
O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev
Full Text: PDF (99 kB) | en |
